Comparison ledger
CEE 200 Spin, Hitachi HS 9050, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 200 SpinCEE | HS 9050Hitachi |
|---|---|---|
| OEM | CEE | Hitachi |
| Category | Resist Processing | Resist Processing |
| Wafer size | — | Mini-Environment Wafer Loading Module (EFEM) |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | CEE 200 | Hitachi HS 9050 |
| Specifications | ||
| Phase | 1 Phase[1] | — |
| Type | Spin Coater[1] | — |
| Model | 200[1] | HS 9050[3] |
| Make | CEE[1] | Hitachi[3] |
| Wafer Sizes | 8 inch[1] | — |
| Configuration | 1 Phase[1] | Multi-chamber[3] |
| Equipment type | Spin Coater[1] | Asher[3] |
| Spin speed | 5000 rpm[2] | — |
| Substrate support | Flat substrates up to 200 mm or fragments[2] | — |
| Substrate thickness max | 12 mm[2] | — |
| Coating thickness | Uniform coating thickness up to 100 µm[2] | — |
| Wafer size | — | Mini-Environment Wafer Loading Module (EFEM)[3] |
| Centering Unit | — | V-notch alignment and centering[3] |
| Tool type | — | Asher[3] |
| Wafer loading module | — | Copper Mini-Environment Wafer Loading Module (EFEM)[3] |
| Load ports | — | 3 ea 25-wafer FOUP-capable load ports with N2 purge[3] |
| Robot | — | Four Axis Robot[3] |
| Chamber count | — | 7 chamber tool[3] |
| Ashing units | — | Five (5) Ashing Units[3] |
| Source unit | — | Lambda Source Unit[3] |
| Capacitance manometer | — | 722B11TCD2FA[3] |
| RF power supply | — | AXG-5000Ⅲ-27M-KE[3] |
| EPD | — | Multi-wavelength EPD, 0.1s sampling (Spectrometer)[3] |
| MFC #N | — | N2 Max Flow 20 L/min[3] |
| MFC #1 | — | O2 Max Flow 20 L/min[3] |
| MFC #2 | — | Ar Max Flow 20 L/min[3] |
| MFC #3 | — | H2 Max Flow 5 L/min[3] |
| MFC #4 | — | N2 Max Flow 20 L/min[3] |
| MFC #5 | — | CF4 Max Flow 1 L/min[3] |
| MFC #6 | — | CO2 Max Flow 0.4 L/min[3] |
| MFC #7 | — | He Max Flow 20 L/min[3] |
| MFC #8 | — | Without gasline, without MFC[3] |
| MFC #9 | — | Without gasline, without MFC[3] |
| MFC #10 | — | Without gasline, without MFC[3] |
| Cooling units | — | Two (2) Cooling Units[3] |
| Lambda source unit | — | Included[3] |
| Process description | — | Precision dry etching system[4] |
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