Comparison ledger
CEE 200 Spin, Tokyo Electron Lithius G 260616, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 200 SpinCEE | Lithius G 260616Tokyo Electron |
|---|---|---|
| OEM | CEE | Tokyo Electron |
| Category | Resist Processing | Resist Processing |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | CEE 200 | Tokyo Electron Lithius G 260616 |
| Specifications | ||
| Phase | 1 Phase[1] | — |
| Type | Spin Coater[1] | — |
| Model | 200[1] | — |
| Make | CEE[1] | — |
| Wafer Sizes | 8 inch[1] | — |
| Configuration | 1 Phase[1] | — |
| Equipment type | Spin Coater[1] | — |
| Spin speed | 5000 rpm[2] | — |
| Substrate support | Flat substrates up to 200 mm or fragments[2] | — |
| Substrate thickness max | 12 mm[2] | — |
| Coating thickness | Uniform coating thickness up to 100 µm[2] | — |
| Manufacturer | — | Tokyo Electron[3] |
| Wafer Size | — | 12 inch[4] |
Plan your fab
Building a Resist Processing process? Get a complete equipment list.
Open the fab equipment planner →