Comparison ledger
CHA SE-1000, CHA SSC-1000, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | SE-1000CHA | SSC-1000CHA |
|---|---|---|
| OEM | CHA | CHA |
| Category | Deposition | Deposition |
| Wafer size | 10 in. | 10 in. |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | CHA SE-1000 | CHA SSC-1000 |
| Specifications | ||
| System type | Sputtering System[1] | Sputtering System[4] |
| Wafer size | 10 in.[1] | 10 in.[4] |
| System size | 10-inch system[1] | — |
| Deposition type | High vacuum deposition system[2] | — |
| Bell jar diameter | 25.5 in., water-cooled[2] | — |
| Baseplate diameter | 26 in. stainless steel[2] | — |
| Wafer capacity | Up to thirty six 4-inch wafers[2] | — |
| Diffusion pump | 10-inch diffusion pump rated at 5300 l/s[3] | — |
| Configuration | — | Multi-station system[4] |
| Cathodes | — | Up to four RF or DC cathodes[4] |
| Operation | — | Sputter up or sputter down operation[4] |
| Fixture | — | Single-plane, multi-substrate rotating fixture[5] |
| Shutter | — | Rotating shutter for pre-deposition and positive thickness cutoff control[5] |
| Automation | — | Computer automation[5] |
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