Comparison ledger
CHA SE-600, CHA SEC-600, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | SE-600CHA | SEC-600CHA |
|---|---|---|
| OEM | CHA | CHA |
| Category | Deposition | Deposition |
| Wafer size | 6 in. | 6 in. |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | CHA SE-600 | CHA SEC-600 |
| Specifications | ||
| Equipment type | Sputtering System[1] | — |
| Wafer size | 6 in.[1] | 6 in.[1] |
| System class | High Vacuum Deposition Systems[2] | — |
| Bell jar diameter | 19.5 in.[2] | — |
| Planetary fixturing capacity | 18 4-inch wafers[2] | — |
| Average pumpdown time | Less than 30 minutes[2] | — |
| System type | — | Sputtering System[1] |
| Equipment description | — | E-beam evaporator[3] |
| Approved deposition materials | — | Al, Au, Ag, Cu, Cr, Ge, Ni, Mo, Pd, Pt, Ti, and others on a case-by-case basis[3] |
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