Comparison ledger
EV Group 810, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 810EV Group | 110Tegal |
|---|---|---|
| OEM | EV Group | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | EV Group 810 | Tegal 110 |
| Cited variants |
|
|
| Specifications | ||
| Listed function | Plasma Activation[3] | — |
| Tool category | Plasma Etching and Cleaning[3] | — |
| Model designation | EVG 810[3] | — |
| Function | Plasma Activation[4] | — |
| Wafer diameter (substrate size) | 50 - 200, 100 - 300 mm[1] | — |
| Process gases | 2 standard process gases (N2 and O2)[1] | — |
| Vacuum system | 9x10-2 mbar[1] | — |
| Opening/closing of chamber | automated[1] | — |
| Loading/unloading of chamber | manual (wafer / substrate placed on loading pins)[1] | — |
| model | — | 110 SE[2] |
| application focus | — | process development applications[2] |
| process capability | — | deep silicon plasma etching[2] |
| capabilities | — | very high aspect ratio trench etch and profile control[2] |
| configuration | — | multiple configurations with minimum technical intervention[2] |
| System type | — | plasma etch system[5] |
| Supported components | — | MEMS and 3D-IC components[2] |
| Control capability | — | very high aspect ratio trench etch and profile control[5] |
| Physical description | — | compact[2] |
Plan your fab
Building a Etch process? Get a complete equipment list.
Open the fab equipment planner →