Comparison ledger
FEI Quanta 600 FEG, KLA 1.112 PSL Wafer, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | ||
|---|---|---|
| OEM | FEI | KLA |
| Category | Metrology & Inspection | Metrology & Inspection |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | FEI Quanta 600 FEG | KLA 1.112 PSL Wafer |
| Cited variants |
| — |
| Specifications | ||
| Resolution in ESEM mode | 1.5 nm[1] | — |
| Operating pressure range | 6 x 10^-4 Pa to ~1000 Pa[1] | — |
| Detector | Special wet STEM detector[1] | — |
| Heating and cooling stage temperature range | 20-1000°C[1] | — |
| Manipulators | Dual Kleindiek nano-manipulators[1] | — |
| Micro-droplet injection system | Included for electrical and mechanical measurements[1] | — |
| Gas injection systems | For platinum and gold e-beam deposition[1] | — |
| EDS | EDAX Energy Dispersive x-ray spectrometer[1] | — |
| EBSD | Electron backscatter diffraction detector available[1] | — |
| Resolution (ESEM mode) | 1.5 nm[1] | — |
| Pressure range | 6 x 10^-4 Pa to ~1000 Pa[1] | — |
| Temperature range (heating/cooling stages) | 20-1000°C[1] | — |
| Wet STEM detector | Present[1] | — |
| Dual Kleindiek nano-manipulators | Present[1] | — |
| EDS (Energy Dispersive x-ray spectrometer) | EDAX[1] | — |
| EBSD (Electron backscatter diffraction detector) | Present[1] | — |
| Instrument type | Environmental FEG-SEM[2] | — |
| Electron source | Schottky field emission (FEG) electron source[2] | — |
| Operating modes | High-vacuum, low-vacuum, and extended-vacuum modes[2] | — |
| Accelerating voltage | 200V to 30kV[2] | — |
| Probe current | Up to 100nA continuously adjustable[2] | — |
| Operating pressure, high-vacuum | 6 × 10−4 Pa[2] | — |
| Operating pressure, low-vacuum | 10 to 130 Pa[2] | — |
| Operating pressure, ESEM-vacuum | 10 to 4000 Pa[2] | — |
| Detectors | Everhart-Thornley SED, Low-vacuum SED (LFD), Gaseous SED (GSED), Solid-state BSED, Gaseous BSED, IR-CCD[2] | — |
| EDS system | Bruker QUANTAX 400 with XFlash 4010 (10mm2) Silicon Drift Detector (SDD)[2] | — |
| Stage travel | X = Y = 150mm, Z = 65mm (Z clearance 93.5mm), Tilt = -5° to +70° degrees, R = 360° continuous[2] | — |
| Compatible stages/modules | Heating stage ~1000°C and Kammrath Weiss tensile module[2] | — |
| Spatial resolution, extended vacuum mode | 1.5nm at 30kV (SE)[2] | — |
| Wafer size restriction | Can image only center of 4 inch wafer[3] | — |
| Configuration | — | NIST Traceable[4] |
| Wafer Size | — | 8 inch[4] |
| NIST Traceable | — | True[4] |
| Compatible Tools | — | Surfscan 6xy0 and Sp1[5] |
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