Comparison ledger
Lam Research AutoEtch 490, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | AutoEtch 490Lam Research | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | Lam Research | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research AutoEtch 490 | Oxford Instruments 100 ICP Fluorine |
| Specifications | ||
| Configuration | Poly[1] | — |
| OEM | Lam Research[2] | — |
| Model | AutoEtch 490[3] | — |
| Category | Plasma Etch[2] | — |
| Wafer Sizes | 6 inch[1] | — |
| Wafer Size Capability | 4, 5, 6 inch capability[2] | — |
| Process Type | in-line, cassette to cassette, fully automated, single wafer, double air-locked, parallel plate plasma etching system[2] | — |
| Applications | Polysilicon, Silicon Nitride, Refractory metal silicides, Thin dielectrics[4] | — |
| Chemistries | chlorine and Freon chemistries[4] | — |
| Wafer size capability | 4, 5, 6 inch[2] | — |
| Process type | Plasma etch[2] | — |
| Chamber configuration | Parallel plate, double air-locked[2] | — |
| Wafer transfer | Cassette-to-cassette, fully automated[2] | — |
| Process control | Automatic, closed-loop feedback control; double keylocked[2] | — |
| Operator interface | CRT monitor display[2] | — |
| Gas handling | Gas panel regulates up to five gases; capacity for six[2] | — |
| Chemistry compatibility | Chlorine and Freon[4] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[5] |
| Cryo DRIE etch rate | — | up to 5 µm/min[5] |
| Wafer size | — | 4 inch, 6 inch, 8 inch (with clamp change)[5] |
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