Comparison ledger
Lam Research Concept Two Speed S (A), Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Concept Two Speed S (A)Lam Research | 110Tegal |
|---|---|---|
| OEM | Lam Research | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | 2010 Vintage | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research Concept Two | Tegal 110 |
| Cited variants | — |
|
| Specifications | ||
| Configuration | Chamber Only[2] | — |
| Voltage | 208 VAC[2] | — |
| Phase | 3 Phase[2] | — |
| Full Load | 21 A[2] | — |
| Main Breaker Rating | 25 A[2] | — |
| Largest Load | 8 A[2] | — |
| Interrupt Current | 10 KA[2] | — |
| Type | Chamber Only[2] | — |
| Vintage | 2010[2] | — |
| Frequency | 50/60 Hz[2] | — |
| Full Load Current | 21 A[2] | — |
| model | — | 110 SE[1] |
| application focus | — | process development applications[1] |
| process capability | — | deep silicon plasma etching[1] |
| capabilities | — | very high aspect ratio trench etch and profile control[1] |
| configuration | — | multiple configurations with minimum technical intervention[1] |
| System type | — | plasma etch system[3] |
| Supported components | — | MEMS and 3D-IC components[1] |
| Control capability | — | very high aspect ratio trench etch and profile control[3] |
| Physical description | — | compact[1] |
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