Comparison ledger
Lam Research SEZ 323 Spin, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | SEZ 323 SpinLam Research | 110Tegal |
|---|---|---|
| OEM | Lam Research | Tegal |
| Category | Etch | Etch |
| Wafer size | Single wafer | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research SEZ | Tegal 110 |
| Cited variants |
| |
| Specifications | ||
| Configuration | Chambers (2)[5] | — |
| Wafer Sizes | 8, 12 inch[5] | — |
| Chambers | 2[5] | — |
| Wafer sizes | 8 inch, 12 inch[5] | — |
| Number of chambers | 2[5] | — |
| OEM | Lam / SEZ[5] | — |
| Model | 323[5] | — |
| Tool type | Spin Etcher[5] | — |
| Voltage | 400 VAC[2] | — |
| Phase | 3 Phase[2] | — |
| Max. Current | 75 A[2] | — |
| Wafer size | Single wafer[2] | — |
| Equipment type | Spin Etcher[2] | — |
| Processing mode | Single wafer[2] | — |
| Process type | Wet chemical processor[2] | — |
| model | — | 110 SE[4] |
| application focus | — | process development applications[4] |
| process capability | — | deep silicon plasma etching[4] |
| capabilities | — | very high aspect ratio trench etch and profile control[4] |
| configuration | — | multiple configurations with minimum technical intervention[4] |
| System type | — | plasma etch system[6] |
| Supported components | — | MEMS and 3D-IC components[4] |
| Control capability | — | very high aspect ratio trench etch and profile control[6] |
| Physical description | — | compact[4] |
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