Waferpedia

Comparison ledger

Paradigmeversus110

Mattson Paradigme, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
ParadigmeMattson
110Tegal
OEMMattsonTegal
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyMattson ParadigmeTegal 110
Cited variants
  • Paradigme XP Light[1]
Specifications
ManufacturerMattson[3]—
ModelParadigme[3]—
CategoryEtch[4]—
Wafer size300 mm[1]—
Process node20-nanometer technology node and below[5]—
Chamber designtwo-wafer chamber design[5]—
Plasma sourceproprietary plasma source[5]—
model—110 SE[2]
application focus—process development applications[2]
process capability—deep silicon plasma etching[2]
capabilities—very high aspect ratio trench etch and profile control[2]
configuration—multiple configurations with minimum technical intervention[2]
System type—plasma etch system[6]
Supported components—MEMS and 3D-IC components[2]
Control capability—very high aspect ratio trench etch and profile control[6]
Physical description—compact[2]

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Sources (6)Every fact above is drawn from these public sources
  1. [1]waferpedia.comwaferpedia.com
  2. [2]web.archive.orgweb.archive.org
  3. [3]Equipment inventory listing
  4. [4]waferpedia.comwaferpedia.com
  5. [5]semiconductoronline.comsemiconductoronline.com
  6. [6]waferpedia.comwaferpedia.com