Waferpedia

Comparison ledger

1505 G 6 EversusModel 2000

Nikon 1505 G 6 E, OAI Model 2000, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
OEMNikonOAI
CategoryLithographyLithography
Wafer size——
Process node——
Introduced——
Production run1988–—
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyNikon 1505OAI Model 2000
Cited variants—
Specifications
Configuration5" reticle[2]—
Resolution650 nm[3]—
Numerical Aperture0.54[3]—
Reduction5x[3]—
Exposure Field15 x 15 mm[3]—
Alignment Accuracy130 nm[3]—
Wafer Size4 inch[2]—
Light Sourceg-line[4]—
Introduction Year1988[3]—
NA (Numerical Aperture)0.54[3]—
MakeNikon[2]—
Model1505 G 6 E[2]—
CategoryStepper[2]—
Wafer Sizes4 inch[2]—
Exposure typeg-line[3]—
NA0.54[3]—
Exposure field9.3 x 18.8 mm[3]—
Product category—UV Exposure Systems[5]
Type—Edge-bead and UV flood exposure system[1]
Exposure beam size—Up to 300mm diameter[1]
Beam divergence—< 2.0° (1/2 angle)[1]
Beam spectrum—Near UV, Mid UV, Deep UV[1]
Beam uniformity—±5.0%[1]
Timer—0.1 to 999.9 sec. (0.1 sec. increments)[1]
Power supplies—200W to 5,000W[1]
Power regulation—Better than ±0.5%[1]
Intensity control—Dual channel optical feedback loop with ±2% precision and long term repeatability[1]
Wafer capacity—To 300mm[1]
Substrate transfer—Cassette-to-cassette[1]
Handling—Vacuum arm (end effector)[1]
Flat orientation—±1 degree[1]
Precision—±25 microns[1]
Z precision—±12.5 microns[1]
Electrical—208/60Hz 3-phase[1]
Vacuum—25" Hg[1]

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Sources (5)Every fact above is drawn from these public sources
  1. [1]oainet.speedstorecdn.comoainet.speedstorecdn.com
  2. [2]inventory listing
  3. [3]web.archive.orgweb.archive.org
  4. [4]ece.utoronto.caece.utoronto.ca
  5. [5]oainet.comoainet.com