Comparison ledger
Nikon S 204 B, SUSS MicroTec 150 e Mask, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | S 204 BNikon | 150 e MaskSUSS MicroTec |
|---|---|---|
| OEM | Nikon | SUSS MicroTec |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | 2002– | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Nikon S 204 B | SUSS MicroTec 150 e Mask |
| Specifications | ||
| OEM | Nikon[1] | — |
| Model | S 204 B[1] | — |
| Machine designation | NSR-S204B[2] | — |
| Equipment type | Stepper[1] | — |
| Exposure wavelength | 248nm[3] | — |
| Laser type | KrF excimer laser[3] | — |
| Reduction ratio | 4:1[3] | — |
| NA | 0.68 (max)[3] | — |
| Wafer size | 300mm[3] | — |
| Reticle size | 6"[3] | — |
| Field size | 25 x 33 mm2[3] | — |
| Manufactured | June 2002[3] | — |
| Category | Lithography[3] | — |
| System designation | NSR-S204B[2] | — |
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