Waferpedia

Comparison ledger

Model 2000versus150 e Mask

OAI Model 2000, SUSS MicroTec 150 e Mask, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
150 e MaskSUSS MicroTec
OEMOAISUSS MicroTec
CategoryLithographyLithography
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyOAI Model 2000SUSS MicroTec 150 e Mask
Cited variants—
Specifications
Product categoryUV Exposure Systems[2]—
TypeEdge-bead and UV flood exposure system[1]—
Exposure beam sizeUp to 300mm diameter[1]—
Beam divergence< 2.0° (1/2 angle)[1]—
Beam spectrumNear UV, Mid UV, Deep UV[1]—
Beam uniformity±5.0%[1]—
Timer0.1 to 999.9 sec. (0.1 sec. increments)[1]—
Power supplies200W to 5,000W[1]—
Power regulationBetter than ±0.5%[1]—
Intensity controlDual channel optical feedback loop with ±2% precision and long term repeatability[1]—
Wafer capacityTo 300mm[1]—
Substrate transferCassette-to-cassette[1]—
HandlingVacuum arm (end effector)[1]—
Flat orientation±1 degree[1]—
Precision±25 microns[1]—
Z precision±12.5 microns[1]—
Electrical208/60Hz 3-phase[1]—
Vacuum25" Hg[1]—

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Sources (2)Every fact above is drawn from these public sources
  1. [1]oainet.speedstorecdn.comoainet.speedstorecdn.com
  2. [2]oainet.comoainet.com