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Comparison ledger

100 ICP FluorineversusVersaline VCX 600 ICP

Oxford Instruments 100 ICP Fluorine, Plasma-Therm Versaline VCX 600 ICP, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
100 ICP FluorineOxford Instruments
OEMOxford InstrumentsPlasma-Therm
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyOxford Instruments 100 ICP FluorinePlasma-Therm Versaline
Specifications
Etch GasesSF6, CF4, O2, Ar, N2, CHF3, C4F8[1]—
Cryo DRIE etch rateup to 5 µm/min[1]—
Wafer size4 inch, 6 inch, 8 inch (with clamp change)[1]—
Phase—1 Phase[2]
Configuration—3 Wire[2]
Source Generator—ENI MKS GMW25[2]
Wafer Size—6 inch[2]
Electrical Input—1 Phase, 3 Wire, 50/60 Hz, 208/230 Vac, 15 A[3]
Included Equipment—Chillers, Transformer, Pumps[2]
Electrical Configuration—1 Phase - 3 Wire - 50/60 Hz - 208/230 Vac - 15 A[2]
Vintage—2013, 2014[2]
Included Components—Chillers, Transformer, Pumps[2]
OEM—Plasma-Therm[2]
Model—Versaline VCX 600[2]
Category—Etch[3]
Process type—Inductively coupled plasma (ICP) etching system[3]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]nanofab.utah.edunanofab.utah.edu
  2. [2]inventory listing
  3. [3]waferpedia.comwaferpedia.com