Comparison ledger
Oxford Instruments 100 ICP Fluorine, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100 ICP FluorineOxford Instruments | 110Tegal |
|---|---|---|
| OEM | Oxford Instruments | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments 100 ICP Fluorine | Tegal 110 |
| Cited variants | — |
|
| Specifications | ||
| Etch Gases | SF6, CF4, O2, Ar, N2, CHF3, C4F8[2] | — |
| Cryo DRIE etch rate | up to 5 µm/min[2] | — |
| Wafer size | 4 inch, 6 inch, 8 inch (with clamp change)[2] | — |
| model | — | 110 SE[1] |
| application focus | — | process development applications[1] |
| process capability | — | deep silicon plasma etching[1] |
| capabilities | — | very high aspect ratio trench etch and profile control[1] |
| configuration | — | multiple configurations with minimum technical intervention[1] |
| System type | — | plasma etch system[3] |
| Supported components | — | MEMS and 3D-IC components[1] |
| Control capability | — | very high aspect ratio trench etch and profile control[3] |
| Physical description | — | compact[1] |
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