Comparison ledger
Oxford Instruments 100 ICP Fluorine, Tokyo Electron Unity II E 855 PP, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100 ICP FluorineOxford Instruments | Unity II E 855 PPTokyo Electron |
|---|---|---|
| OEM | Oxford Instruments | Tokyo Electron |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments 100 ICP Fluorine | Tokyo Electron Unity II E 855 |
| Cited variants | — |
|
| Specifications | ||
| Etch Gases | SF6, CF4, O2, Ar, N2, CHF3, C4F8[2] | — |
| Cryo DRIE etch rate | up to 5 µm/min[2] | — |
| Wafer size | 4 inch, 6 inch, 8 inch (with clamp change)[2] | 8 inch[6] |
| Configuration | — | 2 Chamber system[3] |
| Gas | — | CHF3/CF4/O2[3] |
| Manufacturer | — | Tokyo Electron[5] |
| Model | — | Unity II E 855 PP[3] |
| Equipment type | — | Etcher[3] |
| Process materials | — | SiO2/SiN[3] |
| Vacuum / pumping | — | Ebara pumps[5] |
| Load lock | — | 1[3] |
| Process chambers | — | 2[3] |
| Platform | — | 1[3] |
| Model designation | — | Unity II E 855 PP[5] |
Plan your fab
Building a Etch process? Get a complete equipment list.
Open the fab equipment planner →