Comparison ledger
Oxford Instruments PlasmaPro 100 Cobra, Tegal 6510, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | PlasmaPro 100 CobraOxford Instruments | 6510Tegal |
|---|---|---|
| OEM | Oxford Instruments | Tegal |
| Category | Etch | Etch |
| Wafer size | 100mm | 100mm |
| Process node | — | down to 90nm |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments PlasmaPro 100 | Tegal 6510 |
| Specifications | ||
| Configuration | With HDD and Software[1] | one or two HRē etch modules on a high-vacuum cluster platform[3] |
| Etch plasma type | Inductively Coupled Plasma (ICP)[2] | — |
| Process gases | O2 (100sccm), O2 (10sccm), SF6, CF4, BCl3, Ar, Cl2, HBr[2] | — |
| Mass flow controllers | 8 digital MFCs[2] | — |
| Chuck type | Electrostatic clamping and biasing chuck[2] | — |
| Chuck temperature range | 20°C to 60°C[2] | — |
| End-point detection | Laser reflectometry/interferometry and Optical Emission Spectroscopy (OES)[2] | — |
| Type | Plasma etching tool[2] | — |
| Processing diameter | Full wafer 100 mm[2] | — |
| Plasma type | High density plasma of ICP (Inductively Coupled Plasma) type[2] | — |
| Chuck | Electrostatic clamping and biasing chuck controlled in temperature[2] | — |
| Supported gases | O2 (100 sccm), O2 (10 sccm), SF6, CF4, BCl3, Ar, Cl2, HBr[2] | — |
| Endpoint detection | Laser reflectometry/interferometry and optical emission spectroscopy[2] | — |
| Wafer size | 100 mm (full wafer)[2] | 100mm – 200mm[3] |
| Number of MFCs | 8 digital Mass Flow Controllers[2] | — |
| Gases available | O2 (100sccm), O2 (10sccm), SF6, CF4, BCl3, Ar, Cl2, HBr[2] | — |
| Etch materials | Al, Ti, TiN, Si, SiO2, Si3N4, polyimide, Al2O3[2] | — |
| Gases | O2 (100 sccm), O2 (10 sccm), SF6, CF4, BCl3, Ar, Cl2, HBr[2] | — |
| Compatibility | Microelectronic compatible[2] | — |
| Tool type | — | high-density CCP plasma etch tool[3] |
| RF power | — | dual-frequency RF power application[3] |
| Plasma confinement | — | magnetic plasma confinement[3] |
| Optimization node | — | optimized for device design rules down to 90nm[3] |
| Process type | — | High-density CCP plasma etch[3] |
| RF configuration | — | Dual-frequency RF power application[3] |
| Magnetic confinement | — | Yes[3] |
| Modules | — | One or two HRe etch modules on a high-vacuum cluster platform[3] |
| Design rule | — | 90nm[3] |
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