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03 RR 8120-001-001 Wafer ExchangerversusCM 210

Rorze 03 RR 8120-001-001 Wafer Exchanger, Signatone CM 210, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
CM 210Signatone
OEMRorzeSignatone
CategoryTest & ProbeTest & Probe
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyRorze 03 RR 8120-001-001 Wafer ExchangerSignatone CM 210
Specifications
Wafer size8 inch[1]200 mm[3]
ManufacturerRorze[1]—
Model03 RR 8120-001-001[1]CM 210[5]
Equipment typeWafer Exchanger[1]—
Chuck XY Stage Travel Range—205 mm x 205 mm (8.07 x 8.07 in)[3]
Chuck XY Travel Resolution (Standard)—14 μm Per Degree of Knob Rotation[3]
Chuck XY Travel Resolution (Fine)—1.5 μm Per Degree of Knob Rotation[3]
Chuck Z Stage Travel Range—2.5 mm (0.01 in)[3]
Chuck Z Stage Repeatability—± 1.0 μm[3]
Chuck Theta Stage Travel Range—± 11° (22°)[3]
Chuck Theta Stage Accuracy—< 1.0 μm (measured at the edge of the 200 mm chuck)[3]
Probe Platen Material—Nickel Plated Steel (Aluminum optional)[3]
Probe Platen Dimensions—L = 580mm x W = 637mm x H = 12.7mm[3]
Max Number of Micro Positioners—10x DC/HV or 2x RF + 4x DC or 4x RF + 2x DC or 2x CAP + 4x DC[3]
Contact Repeatability—< 1 μm (0.04 mils) by Manual Control[3]
Standard Wafer Chuck Diameter—203 mm[3]
Standard Wafer Chuck Surface Planarity—±6.5 μm[3]
Standard Wafer Chuck Rigidity—<3 μm / 10N at edge of the chuck[3]
Coax Chuck Operation Voltage—-200V to +200V DC[3]
Coax Chuck Max Voltage (Chuck to GND)—500 V DC[3]
Coax Chuck Isolation—> 150 GΩ[3]
Triax Chuck Isolation (Force to Guard @ 10V)—> 2 TΩ[3]
System Dimensions (Optional Table)—660 x 889 x 610 mm (26 x 35 x 24 in)[4]
System Weight (Optional Table)—109 kg (240 lbs)[4]
System Dimensions Including Table—863 x 1085 x 1370 mm (34 x 42.7 x 53.95 in)[4]
System Weight Including Table—385 kg (849 lbs)[4]
Available Thermal Chuck Options—Standard Hot (25°C to 300°C), Hot/Triax (25°C to 200°C), Hot/3kV Triax (25°C to 200°C)[3]
Type—Probe station[5]
Probe station mode—Manual[3]
Wafer probing—Full or partial wafer probing[3]
Applications—DC, CV/IV, pulsed-IV, high power, RF[3]
RF frequency—Up to 110 GHz[3]
RF setup—2 & 4 port setup[3]
High power application—Up to 12 kV / 600 A[3]
Chuck XY stage travel—205 mm x 205 mm[3]
Chuck Z stage travel—2.5 mm[3]
Chuck theta travel—±11° (22°)[3]
Standard wafer chuck connectivity—Coax BNC (m)[3]
Triaxial wafer chuck connectivity—Triax (m)[3]
Standard wafer chuck material—Nickel plated brass (gold optional)[3]
Triaxial wafer chuck material—Gold plated brass[3]
Standard wafer chuck supported DUT sizes—25 mm, 75 mm, 100 mm, 150 mm, 200 mm[3]
Triaxial wafer chuck supported DUT sizes—3 mm, 75 mm, 125 mm, 200 mm[3]
Triaxial wafer chuck surface planarity—±5 µm[3]
Chuck to thermal shield separation—Minimum 2 mm[3]
Contact repeatability—< 1 µm[3]
Temperature range, standard hot chuck—+25 °C to +300 °C[3]
Temperature range, hot triax chuck—+25 °C to +200 °C[3]
Temperature range, hot 3 kV triax chuck—+25 °C to +200 °C[3]
Temperature control method—Liquid cooled / resistance heater[3]
Temperature stability—±0.1 °C[3]
Temperature accuracy—±0.5 °C[3]
System controller model—S-1080, TC-II, 2XRC-89HL[3]
System dimensions including table—863 x 1085 x 1370 mm[3]
System weight including table—385 kg[3]
Standard warranty—12 months[3]

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Sources (5)Every fact above is drawn from these public sources
  1. [1]Equipment inventory listing
  2. [2]waferpedia.comwaferpedia.com
  3. [3]signatone.comsignatone.com
  4. [4]microworld.eumicroworld.eu
  5. [5]Equipment inventory listing