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Comparison ledger

CM 210versusP 8

Signatone CM 210, SUSS MicroTec P 8, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Documented as functional equivalents— Same function class: Test & Probe, null[1]
Side-by-side comparison of selected equipment models
Attribute
CM 210Signatone
P 8SUSS MicroTec
OEMSignatoneSUSS MicroTec
CategoryTest & ProbeTest & Probe
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilySignatone CM 210SUSS MicroTec P 8
Specifications
Chuck XY Stage Travel Range205 mm x 205 mm (8.07 x 8.07 in)[2]—
Chuck XY Travel Resolution (Standard)14 μm Per Degree of Knob Rotation[2]—
Chuck XY Travel Resolution (Fine)1.5 μm Per Degree of Knob Rotation[2]—
Chuck Z Stage Travel Range2.5 mm (0.01 in)[2]—
Chuck Z Stage Repeatability± 1.0 μm[2]—
Chuck Theta Stage Travel Range± 11° (22°)[2]—
Chuck Theta Stage Accuracy< 1.0 μm (measured at the edge of the 200 mm chuck)[2]—
Probe Platen MaterialNickel Plated Steel (Aluminum optional)[2]—
Probe Platen DimensionsL = 580mm x W = 637mm x H = 12.7mm[2]—
Max Number of Micro Positioners10x DC/HV or 2x RF + 4x DC or 4x RF + 2x DC or 2x CAP + 4x DC[2]—
Contact Repeatability< 1 μm (0.04 mils) by Manual Control[2]—
Standard Wafer Chuck Diameter203 mm[2]—
Standard Wafer Chuck Surface Planarity±6.5 μm[2]—
Standard Wafer Chuck Rigidity<3 μm / 10N at edge of the chuck[2]—
Coax Chuck Operation Voltage-200V to +200V DC[2]—
Coax Chuck Max Voltage (Chuck to GND)500 V DC[2]—
Coax Chuck Isolation> 150 GΩ[2]—
Triax Chuck Isolation (Force to Guard @ 10V)> 2 TΩ[2]—
System Dimensions (Optional Table)660 x 889 x 610 mm (26 x 35 x 24 in)[3]—
System Weight (Optional Table)109 kg (240 lbs)[3]—
System Dimensions Including Table863 x 1085 x 1370 mm (34 x 42.7 x 53.95 in)[3]—
System Weight Including Table385 kg (849 lbs)[3]—
Available Thermal Chuck OptionsStandard Hot (25°C to 300°C), Hot/Triax (25°C to 200°C), Hot/3kV Triax (25°C to 200°C)[2]—
ModelCM 210[4]—
TypeProbe station[4]—
Wafer size200 mm[2]—
Probe station modeManual[2]—
Wafer probingFull or partial wafer probing[2]—
ApplicationsDC, CV/IV, pulsed-IV, high power, RF[2]—
RF frequencyUp to 110 GHz[2]—
RF setup2 & 4 port setup[2]—
High power applicationUp to 12 kV / 600 A[2]—
Chuck XY stage travel205 mm x 205 mm[2]—
Chuck Z stage travel2.5 mm[2]—
Chuck theta travel±11° (22°)[2]—
Standard wafer chuck connectivityCoax BNC (m)[2]—
Triaxial wafer chuck connectivityTriax (m)[2]—
Standard wafer chuck materialNickel plated brass (gold optional)[2]—
Triaxial wafer chuck materialGold plated brass[2]—
Standard wafer chuck supported DUT sizes25 mm, 75 mm, 100 mm, 150 mm, 200 mm[2]—
Triaxial wafer chuck supported DUT sizes3 mm, 75 mm, 125 mm, 200 mm[2]—
Triaxial wafer chuck surface planarity±5 µm[2]—
Chuck to thermal shield separationMinimum 2 mm[2]—
Contact repeatability< 1 µm[2]—
Temperature range, standard hot chuck+25 °C to +300 °C[2]—
Temperature range, hot triax chuck+25 °C to +200 °C[2]—
Temperature range, hot 3 kV triax chuck+25 °C to +200 °C[2]—
Temperature control methodLiquid cooled / resistance heater[2]—
Temperature stability±0.1 °C[2]—
Temperature accuracy±0.5 °C[2]—
System controller modelS-1080, TC-II, 2XRC-89HL[2]—
System dimensions including table863 x 1085 x 1370 mm[2]—
System weight including table385 kg[2]—
Standard warranty12 months[2]—
Configuration—Manual Probe Station[1]
Equipment type—Manual probe station prober[1]
Microscope—Mitutoyo Compound Microscope[1]
Wafer sizes—8 inch[6]

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Sources (6)Every fact above is drawn from these public sources
  1. [1]waferpedia.comwaferpedia.com
  2. [2]signatone.comsignatone.com
  3. [3]microworld.eumicroworld.eu
  4. [4]Equipment inventory listing
  5. [5]inventory listing
  6. [6]inventory listing