Comparison ledger
SPTS CET25, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | CET25SPTS | 110Tegal |
|---|---|---|
| OEM | SPTS | Tegal |
| Category | Etch | Etch |
| Wafer size | 25-wafer batch | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | SPTS CET25 | Tegal 110 |
| Cited variants |
| |
| Specifications | ||
| Process type | HF vapor release etch for MEMS[4] | — |
| Batch size | 25-wafer batch[4] | — |
| Target application | Medium to high volume production applications[4] | — |
| Key benefits | High throughput; process chamber, gas and liquid panel, and pressure control components within a small footprint; extensive process control and monitoring functions[4] | — |
| Configuration support | Various SPTS cluster configurations with the ability to support multiple process modules[4] | — |
| model | — | 110 SE[3] |
| application focus | — | process development applications[3] |
| process capability | — | deep silicon plasma etching[3] |
| capabilities | — | very high aspect ratio trench etch and profile control[3] |
| configuration | — | multiple configurations with minimum technical intervention[3] |
| System type | — | plasma etch system[5] |
| Supported components | — | MEMS and 3D-IC components[3] |
| Control capability | — | very high aspect ratio trench etch and profile control[5] |
| Physical description | — | compact[3] |
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