Comparison ledger
Tegal 110, Thermo Fisher Scientific FEI OptiFIB Taipan G 2 FIB, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 110Tegal | Scientific FEI OptiFIB Taipan G 2 FIBThermo Fisher |
|---|---|---|
| OEM | Tegal | Thermo Fisher |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | 7 nm |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Tegal 110 | Thermo Fisher Scientific FEI OptiFIB Taipan G 2 FIB |
| Cited variants |
| |
| Specifications | ||
| model | 110 SE[1] | — |
| application focus | process development applications[1] | — |
| process capability | deep silicon plasma etching[1] | — |
| capabilities | very high aspect ratio trench etch and profile control[1] | — |
| configuration | multiple configurations with minimum technical intervention[1] | — |
| System type | plasma etch system[4] | — |
| Supported components | MEMS and 3D-IC components[1] | — |
| Control capability | very high aspect ratio trench etch and profile control[4] | — |
| Physical description | compact[1] | — |
| Configuration | — | 7 nm[2] |
| Full Load Amps | — | 24 A[2] |
| Full Load | — | 24 A[5] |
| Largest Load | — | 13 A[5] |
| Acceleration Voltage | — | 0.5-30 kV[7] |
| Beam Current Range | — | 250 fA up to 20 nA[7] |
| Stage Travel (X,Y,Z) | — | 75 x 75 x 20 mm[7] |
| Beam Drift Stability | — | ~4 nm/min (drift)[7] |
| Conductor Resistivity (for deposit) | — | ≤ 200 µΩ·cm[7] |
| Insulator Resistivity | — | ≥ 1e15 µΩ·cm[7] |
| FIB Column / Type | — | Ion-photon Coaxial Taipan Column[7] |
| Image Resolution | — | ~ 2.7 nm at 250 fA, 30 kV (graphite sample)[7] |
| Type | — | Focused Ion Beam (FIB)[2] |
| Node capability | — | 7 nm[5] |
| Electrical requirements | — | 200-240 VAC, Single Phase, 50/60 Hz[2] |
| Full load current | — | 24 A[2] |
| Largest load current | — | 13 A[5] |
| Vintage year | — | 2015[2] |
| Tool type | — | Focused Ion Beam (FIB)[2] |
| Node | — | 7 nm[2] |
| Power | — | 200-240 VAC[2] |
| Phase | — | Single Phase[2] |
| Frequency | — | 50/60 Hz[2] |
| Upgrade | — | CE Upgrade[5] |
| Upgrade note | — | Upgrade from 10 nm G1 to 7 nm G2[3] |
| Condition note | — | Without HDD / SSD[2] |
| Electrical rack note | — | Tapian Electrical Rack[6] |
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