Comparison ledger
Tegal 110, Tokyo Electron TE 8401 Dry, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 110Tegal | TE 8401 DryTokyo Electron |
|---|---|---|
| OEM | Tegal | Tokyo Electron |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Tegal 110 | Tokyo Electron TE 8401 |
| Cited variants |
| |
| Specifications | ||
| model | 110 SE[1] | — |
| application focus | process development applications[1] | — |
| process capability | deep silicon plasma etching[1] | — |
| capabilities | very high aspect ratio trench etch and profile control[1] | — |
| configuration | multiple configurations with minimum technical intervention[1] | — |
| System type | plasma etch system[4] | — |
| Supported components | MEMS and 3D-IC components[1] | — |
| Control capability | very high aspect ratio trench etch and profile control[4] | — |
| Physical description | compact[1] | — |
| Configuration | — | Single chamber[2] |
| Gas | — | He, O2, CF4, HBr, CL2[2] |
| OS | — | EPROM based system[2] |
| Missing | — | pumps[3] |
| Wafer Size | — | 8 inch (200 mm)[5] |
| Chamber Configuration (Poly Etch) | — | Single chamber[2] |
| Chamber Configuration (Nitride Etch) | — | Dual chamber[3] |
| Process Gases (Poly Etch) | — | He, O2, CF4, HBr, Cl2[2] |
| Process Gases (Nitride Etch) | — | HBr, Cl2[3] |
| Operating System (Poly Etch) | — | EPROM based system[2] |
| Operating System (Nitride Etch) | — | JDOS[3] |
| Chamber Configuration | — | Single chamber[2] |
| Process Type | — | Poly etch[2] |
| Gases | — | He, O2, CF4, HBr, Cl2[2] |
| Operating System | — | EPROM based system[2] |
| Vintage | — | 1996[6] |
| Type | — | Dry Etcher[5] |
| Process | — | Poly etch[2] |
| Chamber configuration | — | Dual chamber[3] |
| Operating system | — | EPROM based[2] |
| OEM | — | Tokyo Electron[5] |
| Model | — | TE 8401[5] |
| Category | — | Dry Etcher[5] |
| Control system | — | EPROM based system[2] |
| Process gases | — | He, O2, CF4, HBr, CL2[2] |
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