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Comparison ledger

SOPHI 200 Ionversus0216 7696, E 11368072 ESC

Ulvac SOPHI 200 Ion, Varian 0216 7696, E 11368072 ESC, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
OEMUlvacVarian
CategoryIon ImplantationIon Implantation
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyUlvac SOPHI 200 IonVarian 0216 7696, E 11368072 ESC
Specifications
Dose range (actual dose1010~1014 ions/cm2)[1]—
Beam current (~500μA) - Throughputmore than 100 pieces/h (6in)[1]—
ModelSOPHI 200[2]—
Equipment typeIon Implanter[3]—
Wafer sizes6 inch[1]—
Dose rangeactual dose: 1010~1014 ions/cm2[1]—
Beam current~500μA[1]—
Throughputmore than 100 pieces/h (6in)[1]—
ManufacturerUlvac[2]—
Wafer size6 inch[1]—
Configuration—Platen ADV-S Type[4]
Type—ESC Platen ADV-S Type[4]
Category—Ion Implantation[5]

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Sources (5)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]Equipment inventory listing
  3. [3]waferpedia.comwaferpedia.com
  4. [4]inventory listing
  5. [5]waferpedia.comwaferpedia.com