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Comparison ledger

0216 7696, E 11368072 ESCversus350D

Varian 0216 7696, E 11368072 ESC, Varian 350D, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
350DVarian
OEMVarianVarian
CategoryIon ImplantationIon Implantation
Wafer size——
Process node——
Introduced—1986
Production run—1986–
Lifecycle—Discontinued
Lifecycle milestones——
Control system——
Generation——
FamilyVarian 0216 7696, E 11368072 ESCVarian 350D
Cited variants—
Specifications
ConfigurationPlaten ADV-S Type[2]—
TypeESC Platen ADV-S Type[2]medium current implanter[1]
CategoryIon Implantation[3]—
Relationship to 300 XP—industry-standard predecessor platform that the 300 XP evolved from[1]
Usage period—tool of choice during the early 1980s[1]
Wafer sizes—4 inch and 6 inch[4]
Implant species—Boron (B11 or BF2) and Phosphorus (P31)[4]
Energy range—10 keV to 200 keV[4]
Dose range—1E12 to 5E15 ions/cm²[4]
End stations—Independent dual end stations[1]
Wafer handling—Vertical, edge-only wafer handling[1]
tool type—medium-current ion implanter[1]
relationship to 300 XP—industry-standard predecessor of the 300 XP[1]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]web.archive.orgweb.archive.org
  2. [2]inventory listing
  3. [3]waferpedia.comwaferpedia.com
  4. [4]yumpu.comyumpu.com