Varian
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The Varian 350D is a medium current ion implanter used for doping semiconductor wafers. The Varian 350D can implant boron (B11 or BF2) and phosphorus (P31) into 4-inch or 6-inch wafers. The Varian 350D has an implant energy range of 10 keV to 200 keV and a dose range of 1E12 to 5E15 ions/cm².[1][2]
The 300 XP was introduced in 1986 and evolved from the Varian 350D.
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The following facts about the 350D are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented variants, configuration options, or revision breakpoints of the 350D are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the 350D are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the 350D are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the 350D is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No publicly documented compatible parts, consumables, or accessories for the 350D are on record.
Answerable by: an OEM parts catalog or a service engineer
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Last updated Aug 14, 2026.