Comparison ledger
Applied Materials 0010 47763, Applied Materials Centura 5200 DPS, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010 47763Applied Materials | Centura 5200 DPSApplied Materials |
|---|---|---|
| OEM | Applied Materials | Applied Materials |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | 1995– |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010 47763 | Applied Materials Centura 5200 |
| Specifications | ||
| Configuration | 2nd Source New[1] | 4 Chamber[7] |
| Type | Monopolar Dual Heated[2] | — |
| Description | ASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[3] | — |
| Possible Materials | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Model | 0010-47763[1] | Centura 5200[7] |
| OEM | Applied Materials[1] | Applied Materials[7] |
| Material (possible) | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Application | Fixing wafers in etching process (PVD, CVD, ETCH)[2] | — |
| Quantity available (source) | 1[2] | — |
| Part number | 0010-47763[2] | — |
| Component type | Electrostatic chuck (ESC) assembly[4] | — |
| Designation | ASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[3] | — |
| Wafer size reference | 300 mm[5] | — |
| Associated part number | 0041-39086[6] | — |
| Phase | — | 3 Delta[7] |
| Wafer Size | — | 8 inch[7] |
| Number of Chambers | — | 4[7] |
| Frequency | — | 50/60 Hz[7] |
| Vintage Year | — | 1995[7] |
| Year | — | 1995[7] |
| Product designation | — | Centura 5200 DPS (Decoupled Plasma Source)[7] |
| Wafer sizes | — | 8 inch[7] |
| Chambers | — | 4 Chamber[7] |
| Power | — | 50/60 Hz[7] |
| Vintage | — | 1995[7] |
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