Comparison ledger
Applied Materials Centura 5200 DPS, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Centura 5200 DPSApplied Materials | 110Tegal |
|---|---|---|
| OEM | Applied Materials | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | 1995– | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials Centura 5200 | Tegal 110 |
| Cited variants | — |
|
| Specifications | ||
| Configuration | 4 Chamber[2] | — |
| Phase | 3 Delta[2] | — |
| Wafer Size | 8 inch[2] | — |
| Number of Chambers | 4[2] | — |
| Frequency | 50/60 Hz[2] | — |
| Vintage Year | 1995[2] | — |
| Year | 1995[2] | — |
| OEM | Applied Materials[2] | — |
| Model | Centura 5200[2] | — |
| Product designation | Centura 5200 DPS (Decoupled Plasma Source)[2] | — |
| Wafer sizes | 8 inch[2] | — |
| Chambers | 4 Chamber[2] | — |
| Power | 50/60 Hz[2] | — |
| Vintage | 1995[2] | — |
| model | — | 110 SE[1] |
| application focus | — | process development applications[1] |
| process capability | — | deep silicon plasma etching[1] |
| capabilities | — | very high aspect ratio trench etch and profile control[1] |
| configuration | — | multiple configurations with minimum technical intervention[1] |
| System type | — | plasma etch system[3] |
| Supported components | — | MEMS and 3D-IC components[1] |
| Control capability | — | very high aspect ratio trench etch and profile control[3] |
| Physical description | — | compact[1] |
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