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Centura DPS+ Poly Siliconversus110

Applied Materials Centura DPS+ Poly Silicon, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
Centura DPS+ Poly SiliconApplied Materials
110Tegal
OEMApplied MaterialsTegal
CategoryEtchEtch
Wafer sizeWafer Mapping—
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials CenturaTegal 110
Cited variants—
Specifications
ConfigurationThrough the Wall[2]—
Voltage208 VAC, 3 Phase, 60 Hz[2]—
Full Load Current250 A[2]—
Maximum System Rating90 KVA[2]—
Rating of LArgest Load175 A[2]—
Software Version4.8_26[2]—
Wafer sizeWafer Mapping[2]—
Load Lock TypeNarrow Body[2]—
Robot TypeHP+[2]—
Gas Panel TypeSeriplex[2]—
System Controller5200 only[2]—
Wafer sizes6 inch[2]—
System configurationPosition A: DPS Plus, Position B: DPS Plus, Position D: DPS Plus, Position F: Wafer Orienter[2]—
Voltage/Phase208 VAC, 3 Phase, 60 Hz[2]—
System controller5200[2]—
ESC typePolyimide[2]—
Upper chamber part number0010-13833[2]—
Throttle valve part number0016-39645[2]—
Turbo chamber positionsAlcatel STPA 2203 CV at positions A, B, D[3]—
RF microwave generatorsACG-6B-02, ATLAS 2012 at positions A and B[3]—
Heat exchangerAMAT 1, quantity 2[3]—
Vintage1997[2]—
Position AChamber Type DPS Plus[2]—
Position BChamber Type DPS Plus[2]—
Position DChamber Type DPS Plus[2]—
Position FChamber Type Wafer Orienter[2]—
Throttle Valve P/N0016-39645[2]—
OEMApplied Materials[2]—
ModelCentura DPS+[2]—
CategoryEtch[3]—
Wafer mappingYes[2]—
Power208 VAC, 3 Phase, 60 Hz[3]—
Electrostatic chuckPolyimide[2]—
Through the wallYes[2]—
All cables presentYes[2]—
Independent backside HE coolYes[2]—
Signal lamp towerYes[2]—
Remote service monitorsYes[2]—
Position A chamber typeDPS Plus[3]—
Position B chamber typeDPS Plus[3]—
Position D chamber typeDPS Plus[3]—
Position F chamber typeWafer Orienter[3]—
model—110 SE[1]
application focus—process development applications[1]
process capability—deep silicon plasma etching[1]
capabilities—very high aspect ratio trench etch and profile control[1]
configuration—multiple configurations with minimum technical intervention[1]
System type—plasma etch system[4]
Supported components—MEMS and 3D-IC components[1]
Control capability—very high aspect ratio trench etch and profile control[4]
Physical description—compact[1]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]web.archive.orgweb.archive.org
  2. [2]inventory listing
  3. [3]waferpedia.comwaferpedia.com
  4. [4]waferpedia.comwaferpedia.com