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Centura eMax Nitrideversus110

Applied Materials Centura eMax Nitride, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
Centura eMax NitrideApplied Materials
110Tegal
OEMApplied MaterialsTegal
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials CenturaTegal 110
Cited variants—
Specifications
Configuration2 Chamber Emax[2]—
GasCF4, CH2F2, CHF3, Ar, O2, N2[2]—
OSAMAT Legacy[2]—
Buffer RobotHP[2]—
Chiller 1AMAT Endura HX 18706-01[2]—
Chiller 2Thermo Electron HX 150 106178026[2]—
Wafer size8 inch[2]—
Chamber configuration2 Chamber Emax; 1 Orienter/degas[2]—
Gas chemistryCF4, CH2F2, CHF3, Ar, O2, N2[2]—
Operating systemAMAT Legacy[2]—
Chamber #AeMAX[2]—
Chamber #BeMAX[2]—
Chamber #CEMPTY[2]—
Chamber #DEMPTY[2]—
Chamber #EEMPTY[2]—
Chamber #FOrienter[2]—
ManufacturerApplied Materials[2]—
ModelCentura eMax[2]—
CategoryEtch[3]—
Process gasesCF4, CH2F2, CHF3, Ar, O2, N2[2]—
Chambers2 Chamber Emax[2]—
Module1 Orienter/degas[2]—
CH #AeMAX[2]—
CH #BeMAX[2]—
CH #CEMPTY[2]—
CH #DEMPTY[2]—
CH #EEMPTY[2]—
CH #FOrienter[2]—
model—110 SE[1]
application focus—process development applications[1]
process capability—deep silicon plasma etching[1]
capabilities—very high aspect ratio trench etch and profile control[1]
configuration—multiple configurations with minimum technical intervention[1]
System type—plasma etch system[4]
Supported components—MEMS and 3D-IC components[1]
Control capability—very high aspect ratio trench etch and profile control[4]
Physical description—compact[1]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]web.archive.orgweb.archive.org
  2. [2]inventory listing
  3. [3]waferpedia.comwaferpedia.com
  4. [4]waferpedia.comwaferpedia.com