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PAS 5500versusAS200

ASML PAS 5500, GCA AS200, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Documented as functional equivalents— Same function class: Lithography, 200mm[1]
Side-by-side comparison of selected equipment models
Attribute
PAS 5500ASML
AS200GCA
OEMASMLGCA
CategoryLithographyLithography
Wafer size200mm200mm
Process node280 nm—
Introduced2000—
Production run2000–2010—
LifecycleLegacy—
Lifecycle milestones1995 ASML PAS 5500/400 release—
Control system——
Generationi-linei-line
FamilyASML PAS 5500GCA AS200
Cited variants
  • PAS 5500/275Di-line[1]
  • PAS 5500/60i-line[2]
  • PAS 5500/350C[3]
  • PAS 5500/300DUV[4]
  • PAS 5500/200i-line[5]
  • PAS 5500/400Step & Scan[6]
—
Specifications
Technologyi-line stepper[1]—
Exposure wavelength365 nm[1]i-line[8]
Reduction5X reduction[1]5X[7]
Resolution280 nm[1]—
Wafer handlingFully automated wafer handling system[1]Automatic wafer handler (set for 100mm wafers)[7]
Supported substrate diameter200 mm diameter wafers down to small pieces[1]—
Throughput84 wafers per hour[1]—
Minimum resolution0.45 μm[2]—
Mask size5 inch[2]—
Substrate size4 inch wafer; 150 mm capable with advanced notice[2]—
Substrate typesSilicon, Silicon Germanium, Quartz, Sapphire, Glass[2]—
Wafer sizes100 mm default; 150 mm on request[3]—
AlignmentTopside and backside alignment[3]uDFAS Die-by-Die Alignment[7]
Reduction ratio5X for i-line models; 4X for DUV model[1]—
Overlay accuracy<= 40 nm (PAS 5500/275D), 90 nm (PAS 5500/60), <30 nm (PAS 5500/350C)[1]—
Numerical aperture0.48 to 0.60 (PAS 5500/275D), 0.40 to 0.63 (PAS 5500/350C)[1]—
Reticle size152.40 mm x 152.40 mm (PAS 5500/275D), 5 inch (PAS 5500/60), 6 inch square (PAS 5500/350C)[1]5 inch[7]
Maximum field size22 mm x 22 mm or 27.4 mm x 14.7 mm (PAS 5500/275D), 18 mm x 22.4 mm (PAS 5500/60), 2.2 cm x 2.2 cm (PAS 5500/350C)[1]—
Backside alignmentAvailable on PAS 5500/275D and PAS 5500/350C[1]—
Wafer sizes supported75 mm, 100 mm, 150 mm, 200 mm (PAS 5500/275D); 100 mm default, 150 mm capable (PAS 5500/60); 100 mm default, 150 mm on request, also 4", 6", 8" (PAS 5500/350C)[1]—
Reduction factor5X[1]5X[7]
Maximum wafer size200 mm (8 in)[1]up to 200 mm wafers[7]
Supported wafer diameters75 mm, 100 mm, 150 mm, 200 mm (i-line)[1]—
Maximum die area (field)18 mm x 22.4 mm (i-line)[2]—
Maximum image field22 mm x 27 mm usable (DUV)[4]—
TypeHigh throughput i-line stepper[1]—
Exposure methodStep and repeat[1]—
Maximum supported substrate diameter200 mm[1]—
Reticle thicknesses supported3.05 mm, 3.81 mm, 6.35 mm[1]—
Supported sample sizes75 mm, 100 mm, 150 mm, and 200 mm wafer diameters[1]—
Substrate thickness1 mm maximum[1]—
Generationi-line[1]—
Minimum feature size450 nm[2]—
Alignment between lithographic layers90 nm[2]—
Maximum die area per exposure18 mm by 22.4 mm[2]—
Substrate sizes4 inch wafer[2]—
Reduction imaging5:1 reducing stepper[2]—
Light sourceKrF laser source[3]—
Production spanProduced until 2010[3]—
Exposure modestep and repeat[1]—
Default wafer diameter100 mm[2]—
Exposure wavelength (PAS 5500/275D & PAS 5500/60)365 nm (i-line)[1]—
Exposure wavelength (PAS 5500/350C)248 nm (DUV KrF)[3]—
Resolution (PAS 5500/275D)280 nm[1]—
Resolution (PAS 5500/60)450 nm[2]—
Resolution (PAS 5500/350C)<180 nm (single exposure)[3]—
Overlay accuracy (PAS 5500/275D)40 nm[1]—
Overlay accuracy (PAS 5500/60)90 nm[2]—
Overlay accuracy (PAS 5500/350C)<30 nm (topside alignment)[3]—
Numerical aperture (PAS 5500/275D)0.48 to 0.60[1]—
Numerical aperture (PAS 5500/350C)0.40 to 0.63 (conventional); up to 0.70 (tunable range)[3]—
Reduction factor (PAS 5500/275D & PAS 5500/60)5X[1]—
Reduction factor (PAS 5500/350C)4X[3]—
Maximum field size (PAS 5500/275D)22 mm x 22 mm or 27.4 mm x 14.7 mm[1]—
Maximum field size (PAS 5500/60)18 mm x 22.4 mm[2]—
Maximum field size (PAS 5500/350C)2.2 cm x 2.2 cm (square)[3]—
Throughput (PAS 5500/275D)84 wafers per hour[1]—
Throughput (PAS 5500/350C)>100 wafers per hour[3]—
Reticle size (PAS 5500/275D)152.40 mm x 152.40 mm[1]—
Reticle size (PAS 5500/60)5 inch[2]—
Reticle size (PAS 5500/350C)6 inch square, 0.25 inch thick (standard)[3]—
Supported wafer diameters (PAS 5500/275D)75 mm, 100 mm, 150 mm, 200 mm[1]—
Supported wafer diameters (PAS 5500/60)100 mm (default), 150 mm (with advance notice)[2]—
Supported wafer diameters (PAS 5500/350C)100 mm (default), 150 mm (on request)[3]—
Projection modestep and repeat[1]—
VariantPAS 5500/60 i-line stepper[2]—
Variant exposure wavelength365 nm[2]—
Variant minimum feature size450 nm[2]—
Variant alignment between lithographic layers90 nm[2]—
Variant maximum die area per exposure18 mm by 22.4 mm[2]—
Variant substrate size4 inch wafer; 150 mm capable with advanced notice[2]—
Variant mask size5 inch[2]—
Variant reduction imaging5:1 reducing stepper[2]—
Variant wafer cassette processingautomatic 100 mm wafer cassette processing capability[2]—
Variant wafer diameter100 mm default[2]—
Variant process wavelength248 nm[3]—
Variant laser sourceKrF laser[3]—
Variant throughput> 100 wafers/hour[3]—
Variant wafer sizes100 mm default; 150 mm on request[3]—
Variant first introduced2000[3]—
Variant produced until2010[3]—
LinePAS 5500[1]—
Supported wafer diameter200 mm[1]—
Supported wafer sizes75 mm, 100 mm, 150 mm, 200 mm[1]—
Supported substrate size100 mm cassette processing capability; 150 mm capable with advanced notice[2]—
Substrate typeSilicon, Silicon Germanium, Quartz, Sapphire, Glass[2]—
Wafer diameters supported75 mm, 100 mm, 150 mm, 200 mm[1]—
Maximum throughput84 wafers per hour[1]—
Source typeKrF laser source[3]—
Introduced2000[3]—
Production end2010[3]—
Model—AS200[7]
OEM—GCA[7]
Machine name—AutoStep 200 DSW i-line Wafer Stepper[7]
Wafer stage—200 mm Wafer Stage[7]
Optics NA—0.45 N.A.[7]
Lens—Tropel i-line Lens[7]
Exposure field—15 mm[7]
Illumination—Annular and Quadrupole illumination available[7]
Feature size specification—0.65 µm features[7]
Overlay specification—<0.125 µm using local alignment[7]
Focus repeatability—<0.2 µm[7]
Automation—All operations are automated, including wafer loading, aligning, reticle loading and aligning[7]
Wafer leveling—Used to provide optimum focus range[7]
Automatic calibrations—All tool calibrations are performed automatically[7]
Focus compensation—Compensated for lens heating and barometric shifts[7]
Reticle management—Reticle Management System (up to 10 reticles)[7]
Lens numerical aperture—0.45[7]
Lens type—Tropel i-line lens[7]
Exposure field size—15mm[7]
Feature resolution specification—0.65µm[7]
Sigma (partial coherence)—0.5[7]
Wafer stage size—200mm Wafer Stage[7]
Reticle capacity—up to 10 reticles[7]
Illumination modes—Annular and Quadrupole illumination available[7]
Focus system repeatability—<0.2µm[7]
PAS 5500 entryAS200 entryAsk about these tools →Share experience with this comparison →

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Sources (8)Every fact above is drawn from these public sources
  1. [1]nist.govnist.gov
  2. [2]snfguide.stanford.edusnfguide.stanford.edu
  3. [3]epfl.chepfl.ch
  4. [4]wiki.nanotech.ucsb.eduwiki.nanotech.ucsb.edu
  5. [5]manualslib.commanualslib.com
  6. [6]chiphistory.orgchiphistory.org
  7. [7]cnfusers.cornell.educnfusers.cornell.edu
  8. [8]cnfusers.cornell.educnfusers.cornell.edu