Comparison ledger
ASML PAS 5500 and Nikon NSR 2205 i 14 E 2 i-Line, side by side. Every value shown is drawn from its cited encyclopedia entry.
| Attribute | PAS 5500ASML | |
|---|---|---|
| OEM | ASML | Nikon |
| Category | Lithography | Lithography |
| Wafer size | 200mm | 200mm |
| Process node | 280 nm | — |
| Introduced | 2000 | — |
| Production run | 2000–2010 | — |
| Lifecycle | Legacy | — |
| Lifecycle milestones | 1995 ASML PAS 5500/400 release | — |
| Control system | — | — |
| Generation | i-line | — |
| Family | ASML PAS 5500 | Nikon NSR 2205 |
| Cited variants |
| |
| Specifications | ||
| Technology | i-line stepper[1] | — |
| Exposure wavelength | 365 nm[1] | — |
| Reduction | 5X reduction[1] | — |
| Resolution | 280 nm[1] | 0.35μm or better[12] |
| Wafer handling | Fully automated wafer handling system[1] | — |
| Supported substrate diameter | 200 mm diameter wafers down to small pieces[1] | — |
| Throughput | 84 wafers per hour[1] | — |
| Minimum resolution | 0.45 μm[2] | — |
| Mask size | 5 inch[2] | — |
| Substrate size | 4 inch wafer; 150 mm capable with advanced notice[2] | — |
| Substrate types | Silicon, Silicon Germanium, Quartz, Sapphire, Glass[2] | — |
| Wafer sizes | 100 mm default; 150 mm on request[3] | — |
| Alignment | Topside and backside alignment[3] | — |
| Configuration | — | Asahi N 4 A-C Chamber:[8] |
| Chamber | — | 21.1℃[8] |
| LLTC | — | 23℃[8] |
| MCSV Version | — | 3.46 C[8] |
| N.A. | — | 0.63 Exposure light source: i line[12] |
| Reduction ratio | — | 1:5[12] |
| Exposure field size | — | 22mm square to 17.9 (H) x 25.2 (V)mm[12] |
| Alignment accuracy (EGA, |x|+3σ) | — | 40nm or better[12] |
| Alignment system | — | LSA(standard), FIA(standard), LIA(optional)[12] |
| Wafer size | — | Throughput ≧ 103 wafers/hour (200 mm wafer)[12] |
| Magnification | — | 1/5 Reduction[12] |
| Light-Source | — | i-Line(365nm)[13] |
Plan your fab
Building a Lithography process? Get a complete equipment list.
Open the fab equipment planner →