Comparison ledger
Canon Anelva ILD 4100 SR Dry, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 110Tegal | |
|---|---|---|
| OEM | Canon | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Canon Anelva | Tegal 110 |
| Cited variants |
|
|
| Specifications | ||
| Configuration | Oxide[3] | — |
| Manufacturer | Canon Anelva[1] | — |
| Model | ILD 4100 SR[1] | — |
| Equipment type | Dry Etcher[4] | — |
| Wafer size | 8 inch[1] | — |
| Vintage | 1996[4] | — |
| Process | Oxide[3] | — |
| Tool type | Dry Etcher[1] | — |
| Wafer sizes | 8 inch[1] | — |
| model | — | 110 SE[2] |
| application focus | — | process development applications[2] |
| process capability | — | deep silicon plasma etching[2] |
| capabilities | — | very high aspect ratio trench etch and profile control[2] |
| configuration | — | multiple configurations with minimum technical intervention[2] |
| System type | — | plasma etch system[5] |
| Supported components | — | MEMS and 3D-IC components[2] |
| Control capability | — | very high aspect ratio trench etch and profile control[5] |
| Physical description | — | compact[2] |
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