Comparison ledger
CEE 100, Karl Suss MA6/BA6, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100CEE | MA6/BA6Karl Suss |
|---|---|---|
| OEM | CEE | Karl Suss |
| Category | Lithography | Lithography |
| Wafer size | 6" | Samples ranging in size from 10mm to 150mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | CEE 100 | Karl Suss MA6/BA6 |
| Cited variants |
| — |
| Specifications | ||
| Tool type | Spray Developer[1] | — |
| Accepts wafer size | up to 6" wafers[2] | — |
| Programmable programs | 10 programs[2] | — |
| Steps per program | up to 10 steps[2] | — |
| Programmable step parameters | Acceleration, Speed, Time[2] | — |
| Associated document | CEE Model 100CB Spinner.doc[2] | — |
| Wafer size | Up to 6 inches[2] | Samples ranging in size from 10mm to 150mm[6] |
| Programs | 10 programs each with up to 10 steps[2] | — |
| Control parameters | Acceleration, Speed, Time[2] | — |
| Equipment type | Spin coater[3] | — |
| Programming | 10 programs; up to 10 steps per program[2] | — |
| Step parameters | Acceleration, speed, time[2] | — |
| OEM | — | Karl Suss[4] |
| Model | — | MA6/BA6[4] |
| Category | — | Frontside/Backside Mask Aligner[5] |
| Application | — | For topside or backside photo alignment and exposure[4] |
| Backside alignment | — | Equipped with backside align capability with automated image capture and computer display optics[5] |
| Exposure wavelengths | — | 350-450nm[5] |
| Lamp house | — | 350W lamp house containing a 350W mercury short-arc lamp[5] |
| Exposure modes | — | Hard contact, soft contact, proximity, and vacuum contact[5] |
| Resolution | — | Line/space resolution of <1.0 microns under optimum conditions[5] |
| Alignment accuracy | — | 0.25 microns under optimum conditions[5] |
| Constant intensity control | — | Constant intensity controller (CIS) regulates lamp power to deliver constant intensity exposures[5] |
| Sample size range | — | 10mm to 150mm[5] |
| Mask size range | — | 4" to 7" sq.[5] |
| Minimum mask thickness | — | .09"[5] |
| Type | — | Frontside/Backside Mask Aligner[5] |
| Exposure methods | — | Flood, proximity, soft contact, hard contact, low vacuum, vacuum contact[7] |
| Mask size | — | 2.5 in x 2.5 in, 4 in x 4 in, 5 in x 5 in, and 8 in x 8 in[7] |
| Top-side alignment wafer size | — | Up to 6 in in diameter[7] |
| Bottom-side alignment wafer size | — | 3 in and 4 in chucks[7] |
| Maximum wafer thickness | — | 3 mm[7] |
| Line/space resolution | — | <1.0 microns under optimum conditions[6] |
| Mask thickness minimum | — | .09 in[6] |
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