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Comparison ledger

100versusMA 8 BA 8 Mask

CEE 100, SUSS MicroTec MA 8 BA 8 Mask, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
100CEE
MA 8 BA 8 MaskSUSS MicroTec
OEMCEESUSS MicroTec
CategoryLithographyLithography
Wafer size6"High precision micrometer for wafer alignment adjustment
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyCEE 100SUSS MicroTec MA 8 Mask
Cited variants—
Specifications
Tool typeSpray Developer[1]—
Accepts wafer sizeup to 6" wafers[2]—
Programmable programs10 programs[2]—
Steps per programup to 10 steps[2]—
Programmable step parametersAcceleration, Speed, Time[2]—
Associated documentCEE Model 100CB Spinner.doc[2]—
Wafer sizeUp to 6 inches[2]High precision micrometer for wafer alignment adjustment[4]
Programs10 programs each with up to 10 steps[2]—
Control parametersAcceleration, Speed, Time[2]—
Equipment typeSpin coater[3]—
Programming10 programs; up to 10 steps per program[2]—
Step parametersAcceleration, speed, time[2]—
Configuration—Backside Optical Alignment[4]
Wafer Loading—Manual loading & unloading[4]
Microscope Lenses—2× 5× lenses, 2× 10× lenses[4]
Power—1000 W UV mercury lamp[4]
Micrometer axes—X / Y / θ (theta)[4]
X / Y minimal travel—10 mm[4]
θ-axis maximum rotation angle—±5°[4]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]nanofab.ece.cmu.edunanofab.ece.cmu.edu
  2. [2]nanofab.utah.edunanofab.utah.edu
  3. [3]nanofab.utah.edunanofab.utah.edu
  4. [4]inventory listing