Comparison ledger
CEE 1000 Hot Plate, Tystar Mini Tytan 4600, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Mini Tytan 4600Tystar | |
|---|---|---|
| OEM | CEE | Tystar |
| Category | Thermal / Diffusion | Thermal / Diffusion |
| Wafer size | — | 50mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | CEE 1000 Hot Plate | Tystar Mini Tytan 4600 |
| Specifications | ||
| Configuration | 4"[1] | — |
| Type | Hot Plate[1] | — |
| Wafer Size | 4 inch[1] | up to 150 mm (6 inch)[2] |
| Furnace stack tubes | — | Four vacuum tubes in one furnace stack[2] |
| Atmospheric pressure tubes | — | Two[2] |
| Low-pressure tubes | — | Two[2] |
| Maximum temperature for silicon nitride | — | Up to 850 °C[2] |
| Maximum temperature for all others | — | Up to 650 °C[2] |
| Maximum deposition thickness | — | 5 µm[2] |
| Low temperature oxidation | — | For processes of < 450 °C[2] |
| Mass flow system | — | MFS-460[2] |
| Data collection system | — | DCS-30[2] |
| Maximum Temperature (Silicon Nitride) | — | 850 °C[2] |
| Maximum Temperature (Other Processes) | — | 650 °C[2] |
| Low Temperature Oxidation Temperature | — | < 450 °C[2] |
| Number of Tubes | — | 4 (2 atmospheric, 2 low-pressure)[2] |
| LPCVD Processing Status | — | Currently not available[2] |
| Tool type | — | Horizontal furnace system[2] |
| Applications | — | Diffusion, oxidation, and LPCVD[2] |
| Wafer size | — | Up to 6 inches / 150 mm[2] |
| Maximum temperature for other processes | — | Up to 650 °C[2] |
| Process tube assignment | — | Tube 2: Nitride; Tube 3: Polysilicon; Tube 4: Low Temperature Oxidation[3] |
| Available recipes | — | Stochiometric low-stress nitride, standard polysilicon, and standard LTO[3] |
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