Waferpedia

Comparison ledger

200 Spinversus5110 C Photoresist Spin

CEE 200 Spin, Solitec 5110 C Photoresist Spin, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
OEMCEESolitec
CategoryResist ProcessingResist Processing
Wafer size—100A, 3 sigma, full radius uniformity across a wafer
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyCEE 200Solitec 5110 C Photoresist Spin
Cited variants—
  • Option A (P/N 5110C-1)[1]
  • Option B (P/N 5110C-2)[1]
  • Option C (P/N 5110C-3)[1]
Specifications
Phase1 Phase[2]—
TypeSpin Coater[2]—
Model200[2]—
MakeCEE[2]—
Wafer Sizes8 inch[2]—
Configuration1 Phase[2]Control Panel has 5 potentiometers for speed setting with individual 0-99.9s timers[1]
Equipment typeSpin Coater[2]—
Spin speed5000 rpm[3]—
Substrate supportFlat substrates up to 200 mm or fragments[3]—
Substrate thickness max12 mm[3]—
Coating thicknessUniform coating thickness up to 100 µm[3]—
Wafer Handling—Manual with loading paddle to center wafer[1]
Solvent Dispense—Pressurized tank required[1]
Substrate Sizes (Max)—9" Round, 6" square, 9" diagonal rectangular[1]
Tachometer—Digital readout from optical encoder, 10 rmp resolution[1]
Acceleration—Variable from 1,000 to 40,000 rpm/sec[1]
Process Control—Digital timers with manual programming, relay logic[1]
Time—Variable from 1 to 999 sec in 1 sec increments[1]
With precise dispense adjustment—0.5 to 38 mlt 1%, viscosity 4 to 10,000 centistokes[1]
Wafer size—100A, 3 sigma, full radius uniformity across a wafer[1]
Extra Resist Pumps—P/N 0967[1]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]Equipment inventory listing
  2. [2]inventory listing
  3. [3]amolf.nlamolf.nl