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Comparison ledger

200 SpinversusFalcon ACS 200 Coater Developer Cluster

CEE 200 Spin, SUSS MicroTec Falcon ACS 200 Coater Developer Cluster, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
OEMCEESUSS MicroTec
CategoryResist ProcessingResist Processing
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyCEE 200SUSS MicroTec Falcon
Cited variants—
  • Falcon ACS 200[1]
Specifications
Phase1 Phase[2]—
TypeSpin Coater[2]—
Model200[2]Falcon ACS 200[5]
MakeCEE[2]—
Wafer Sizes8 inch[2]4, 5, 6, 8 inch[4]
Configuration1 Phase[2]Developer (4)[1]
Equipment typeSpin Coater[2]Coater / Developer Cluster System[5]
Spin speed5000 rpm[3]—
Substrate supportFlat substrates up to 200 mm or fragments[3]—
Substrate thickness max12 mm[3]—
Coating thicknessUniform coating thickness up to 100 µm[3]—
Configuration (Asset #142142)—Developer (4) 2000 Vintage[1]
Configuration (Asset #142141)—Coater (3) 2000 Vintage[4]
OEM—SUSS[1]
Category—Resist Processing[5]

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Sources (5)Every fact above is drawn from these public sources
  1. [1]Equipment inventory listing
  2. [2]inventory listing
  3. [3]amolf.nlamolf.nl
  4. [4]inventory listing
  5. [5]waferpedia.comwaferpedia.com