Waferpedia

Comparison ledger

200 Spinversus211

CEE 200 Spin, TEGAL 211, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
211TEGAL
OEMCEETEGAL
CategoryResist ProcessingResist Processing
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyCEE 200TEGAL 211
Specifications
Phase1 Phase[1]—
TypeSpin Coater[1]—
Model200[1]—
MakeCEE[1]—
Wafer Sizes8 inch[1]—
Configuration1 Phase[1]—
Equipment typeSpin Coater[1]—
Spin speed5000 rpm[2]—
Substrate supportFlat substrates up to 200 mm or fragments[2]—
Substrate thickness max12 mm[2]—
Coating thicknessUniform coating thickness up to 100 µm[2]—
Refurbished RTP RTA—AG Associates 4100, 4108, 8108, 8800, 8800i,210, 310, 410, 610, 610I, MPT RTP-600S, 800S, RTP-3000[3]
KLA-Tencor Spare Parts and Service—RS-35C,RS-55,RS-75,RS-100,UV-1050,UV-1080,UV-1250,UV-1280,ASET F5 / F5X,AIT Systems,HRP-220 Stylus Profiler[3]
Refurbished Isotropic Plasma Etcher—Matrix, Tegal, Lam Research, Branson/IPC, PlasmaTherm[3]
Refurbished PECVD, ALD Equipment—Cambridge, Oxford PlasmaLab , Plasma-Therm, STS/SPTS, AMAT[3]
Refurbished Mask Aligner—Canon Neutronix PLA501/545, Suss MA200CC, MA8BA8 GEN3, MA8BA8 GEN2, MA8BA8, MA200E[3]
Refurbished Bonding—SUSS SB6E, SUSS SB8E, EVG 620 BA, EVG EV501, West Bond 7200AR 7400A[3]
Refurbished Wafer Prober—Electroglas EG 4090u+, EG 4090, EG 2001X, EG 1034X, Cascade PS-21[3]
Process Type—Plasma Asher/Etcher[4]
Wafer Size (max)—3 inch[4]
Form Factor—Table top[4]
Chamber Material—Aluminum[3]
Chamber Internal Dimensions—6 x 6 x 3.75 inches[3]
Timer Range—0-99 minutes[4]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]amolf.nlamolf.nl
  3. [3]dealer listingsemistarcorp.com
  4. [4]jmind.comjmind.com