Comparison ledger
Disco DAD 3350 Automatic Dicing and Disco DAG810, side by side. Every value shown is drawn from its cited encyclopedia entry.
| Attribute | DAG810Disco | |
|---|---|---|
| OEM | Disco | Disco |
| Category | Dicing & Grinding | Dicing & Grinding |
| Wafer size | — | 4" |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Disco DAD | Disco DAG810 |
| Specifications | ||
| Maximum Power | AC 200 V[1] | — |
| Configuration | 50/60 Hz[1] | — |
| Phase | 3 Phase[1] | — |
| Power | 4.9 kVA[1] | — |
| Voltage | 200 VAC[4] | — |
| Equipment type | — | compact, automatic grinder[6] |
| Materials | — | silicon, III/V materials (GaN, GaAs, InP), and various glass types (pure amorphous SiO2, float glass, pyrex)[6] |
| Wafer sizes supported by universal vacuum chuck table | — | 4", 5", 6", and 8"[6] |
| Mechanical frame use | — | for UV-tape mounted wafers or chips[6] |
| Spindle | — | high-rigidity, low-vibration spindle[6] |
| Grinding wheels | — | dedicated wheels for coarse and fine silicon grinding, coarse and fine glass grinding, and GaN fine grinding[6] |
| Probe-height | — | real-time probe-height from 4" wafer size[6] |
| User interface | — | LCD touch screen[6] |
| Grinding speed | — | as high as 30 microns/min[6] |
| Thickness variation | — | total thickness variation close to one micron[6] |
| Surface roughness | — | less than 100 nm[6] |
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