Comparison ledger
Disco DFL7340, EV Group 501, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | DFL7340Disco | 501EV Group |
|---|---|---|
| OEM | Disco | EV Group |
| Category | Dicing & Grinding | Dicing & Grinding |
| Wafer size | 200mm | 200mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Disco DFL7340 | EV Group 501 |
| Specifications | ||
| Model | DFL7340[1] | — |
| OEM | Disco[1] | — |
| Process area | Packaging[1] | — |
| Compatible materials | Si wafers only[1] | — |
| Stealth dicing engine | SDE03 engine with λ = 1342 nm[1] | — |
| Maximum sample diameter | 200 mm[1] | — |
| Dicing orientation | Topside or backside (through tape) dicing possible[1] | — |
| Category | Packaging & Bonding[2] | — |
| Process | Laser stealth dicing of Si wafers[3] | — |
| Compatible material | Si wafers only[1] | — |
| Laser engine wavelength | λ = 1342 nm[1] | — |
| Process wavelength | IR[3] | — |
| Feeding speed | 1.0–1000 mm/s[3] | — |
| Position accuracy | 3 µm[3] | — |
| Surface roughness requirement | Dicing streets must be smooth (mirror polish) on the surface where the laser is incident[2] | — |
| Street clearance requirement | Wafer must be metal-free in a width of 0.4 × substrate thickness, centered on the dicing street[2] | — |
| Si resistivity requirement | ρ > 0.01 Ω•cm[2] | — |
| Automation mode | Fully automated mode[3] | — |
| Backside alignment | IR camera for back side alignment[3] | — |
| Vendor | Disco[1] | — |
| Laser wavelength | 1342 nm (IR)[1] | — |
| Laser type | ns-pulsed near infrared laser[4] | — |
| Wafer sizes supported | 200mm wafers or smaller (6in, 4in, 3in, coupon, wafer quarter)[3] | — |
| Maximum wafer thickness | Up to 1.5 mm thick wafers[3] | — |
| Dicing sides | Topside or backside (through tape) dicing possible[1] | — |
| IR camera for back side alignment | IR camera for back side alignment[3] | — |
| Feeding speed, X-axis & Y-axis | 1.0 – 1000 mm/s[3] | — |
| Position accuracy, X-axis & Y-axis | 3 µm[3] | — |
| Operation mode | Fully automated mode[3] | — |
| Process purpose | Laser stealth dicing of Si wafers[3] | — |
| At the nanoFAB | Staff processing only; user training not offered on this tool[4] | — |
| Equipment name | — | EVG 501 Wafer Bonder[5] |
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