Comparison ledger
GCA 6300 DSW, SUSS MicroTec MA6-BA6, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 6300 DSWGCA | MA6-BA6SUSS MicroTec |
|---|---|---|
| OEM | GCA | SUSS MicroTec |
| Category | Lithography | Lithography |
| Wafer size | 150mm | 150mm |
| Process node | 5X g-line wafer stepper | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | g-line | — |
| Family | GCA 6300 DSW | SUSS MicroTec MA6-BA6 |
| Cited variants |
| |
| Specifications | ||
| Tool type | 5X g-line wafer stepper[1] | advanced direct write ebeam lithography system[5] |
| Exposure wavelength | g-line (436 nm)[1] | — |
| Numerical aperture | 0.30 NA[1] | — |
| Reduction ratio | 5:1[1] | — |
| Variable field size | up to 15 mm square[1] | — |
| Minimum feature size | <0.9 µm[1] | — |
| Wafer accommodation | 3" up to 150 mm; smaller pieces[1] | — |
| Registered alignment | <0.25 µm[1] | — |
| Mask size | 5" x 0.090"-thick masks[1] | — |
| Step and repeat exposure system | laser-controlled stage motion[1] | — |
| Lens | Zeiss lens with 0.30 numerical aperture[1] | — |
| Maximum die size | ~15 mm x 15 mm[2] | — |
| Minimum substrate size | ~10 x 10 mm[2] | — |
| Mask plates | 5x5x0.090 inches[2] | — |
| Lens manufacturer | Zeiss (g-line) / Olympus (i-line)[2] | — |
| Lens numerical aperture | 0.30 (g-line)[1] | — |
| Field size | up to 15 mm square (g-line)[1] | — |
| Resolution | <0.9 µm (g-line)[1] | — |
| Alignment accuracy | typically <0.25 µm (g-line)[1] | — |
| Registration tolerance (global) | max 0.30 µm (i-line)[2] | — |
| Registration tolerance (local, DFAS) | max 0.15 µm (i-line)[2] | — |
| Wafer size | 3" to 150 mm (g-line)[1] | Whole wafers 2" up to 6" can be loaded[3] |
| Light source | 350 W Hg arc lamp (i-line)[2] | — |
| Intensity at wafer | ~180 mW/cm² (i-line)[2] | — |
| Depth of field | 1.2 µm for 0.7 µm process (i-line)[2] | — |
| Stage system | laser-controlled stage motion (g-line)[1] | — |
| Autofocus | yes (i-line)[2] | — |
| Exposure type | step and repeat[1] | — |
| Reduction | 5:1[1] | — |
| Alignment | Registered alignment is typically <0.25µm[1] | — |
| Registration tolerance | Max 0.30 um global alignment; Max 0.15 um local alignment[2] | — |
| System name | — | JBX 6300FS[5] |
| Wafer capacity | — | up to 150mm wafers[5] |
| Feature size capability | — | sub-10 nm features[5] |
| Optical configuration | — | a fifth lens can be used to get a smaller beam spot size[5] |
| Manufacturer | — | SUSS MicroTec[3] |
| Model | — | MA6 & MA6/BA6[3] |
| Instrument type | — | Lithography[3] |
| Techniques | — | Frontside Alignment, Backside Alignment, Flood exposure[3] |
| Sample capacity | — | Samples pieces up to 6"x6" square can be loaded[3] |
| Sample thickness | — | Samples up to 6mm thick can be loaded[3] |
| Exposure resolution, soft contact mode | — | 1 - 2 um[3] |
| Exposure resolution, hard contact mode | — | 1 um[3] |
| Exposure resolution, soft vacuum contact mode | — | 1 - 0.5 um[3] |
| Exposure resolution, vacuum contact mode | — | 0.4 - 0.5 um[3] |
| Channel 1 wavelength | — | 365nm[3] |
| Channel 1 irradiance | — | 15 mW/cm2[3] |
| Channel 2 wavelength | — | 405nm[3] |
| Channel 2 irradiance | — | 25 mW/cm2[3] |
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