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Comparison ledger

2300 e 5 Kiyoversus110

Lam Research 2300 e 5 Kiyo, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
2300 e 5 KiyoLam Research
110Tegal
OEMLam ResearchTegal
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyLam Research 2300Tegal 110
Cited variants—
Specifications
Configuration3 Chamber + 1 Strip[2]—
LoadportTDK TAS300[2]—
ATM RobotKawasaki P/N 3NT510B-A002[2]—
TM RobotBrooks 201600-294-0002[2]—
MKS E28D-29237 Process Vacuum Gauge0.1 Torr[2]—
MKS 625D-30518 Chamber Vacuum Gauge1 Torr[2]—
Number of Chambers3 Chamber + 1 Strip[2]—
Turbo PumpEdwards STP-XA3203CV[2]—
Turbo Pump ControllerEdwards SCU-1600[2]—
Bias RF GeneratorLam 3156110-214[2]—
model—110 SE[1]
application focus—process development applications[1]
process capability—deep silicon plasma etching[1]
capabilities—very high aspect ratio trench etch and profile control[1]
configuration—multiple configurations with minimum technical intervention[1]
System type—plasma etch system[3]
Supported components—MEMS and 3D-IC components[1]
Control capability—very high aspect ratio trench etch and profile control[3]
Physical description—compact[1]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]web.archive.orgweb.archive.org
  2. [2]inventory listing
  3. [3]waferpedia.comwaferpedia.com