Comparison ledger
Lam Research 2300 Exelan Flex 45 Dielectric, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 2300 Exelan Flex 45 DielectricLam Research | 110Tegal |
|---|---|---|
| OEM | Lam Research | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research 2300 | Tegal 110 |
| Cited variants | — |
|
| Specifications | ||
| Configuration | With 12 gas lines[2] | — |
| Gas lines | 12[2] | — |
| Gases | C4F8, CF4, O2, Ar, CO, CO2, O2, CHF3, HBr, N2, SF6, H2[2] | — |
| Chamber | Single chamber with homemade manual load lock[2] | — |
| Plasma technology | High-density plasma[3] | — |
| Manufacturer | Lam Research[3] | — |
| Platform | 2300 Exelan Flex 45[3] | — |
| Wafer format | 300mm[3] | — |
| Equipment type | Dielectric plasma etch system[3] | — |
| Process technology | Dual Frequency Confined plasma with multi-frequency RF[3] | — |
| Chamber configuration | Single chamber with homemade manual load lock[2] | — |
| RF generator status | 27MHz RF generator not working[2] | — |
| model | — | 110 SE[1] |
| application focus | — | process development applications[1] |
| process capability | — | deep silicon plasma etching[1] |
| capabilities | — | very high aspect ratio trench etch and profile control[1] |
| configuration | — | multiple configurations with minimum technical intervention[1] |
| System type | — | plasma etch system[4] |
| Supported components | — | MEMS and 3D-IC components[1] |
| Control capability | — | very high aspect ratio trench etch and profile control[4] |
| Physical description | — | compact[1] |
Plan your fab
Building a Etch process? Get a complete equipment list.
Open the fab equipment planner →