Comparison ledger
Lam Research 2300 V 2 Kiyo 45, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 2300 V 2 Kiyo 45Lam Research | 110Tegal |
|---|---|---|
| OEM | Lam Research | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research 2300 | Tegal 110 |
| Cited variants |
|
|
| Specifications | ||
| Configuration | Polysilicon[1] | — |
| Process capability | Polysilicon[1] | — |
| Chamber configuration | 4ch (4-channel)[1] | — |
| Process gases | SiCl4, BCl3, HBr, CH4, CHF3, Cl2, CH2F2, CH3F, NF3, O2, CF4, He, Ar, N2[1] | — |
| Vacuum pump | Edwards STP XA2703CV[1] | — |
| Make | Lam[5] | — |
| Model | 2300 V 2 Kiyo 45[5] | — |
| Category | Etcher[5] | — |
| Process | Polysilicon etching[1] | — |
| Number of Chambers | 4ch[1] | — |
| Gas Chemistry | SiCl4 / BCl3 / HBr / CH4 / CHF3 / Cl2 / CH2F2 / CH3F / NF3 / O2 / CF4 / He / Ar / N2[1] | — |
| Pump | Edwards STP XA2703CV[1] | — |
| Number of chambers | 4[1] | — |
| Process chambers | 4[1] | — |
| Process Type | Polysilicon[1] | — |
| Chamber Count | 4[1] | — |
| Supported Gases | SiCl4 / BCl3 / HBr / CH4 / CHF3 / Cl2 / CH2F2 / CH3F / NF3 / O2 / CF4 / He / Ar / N2[1] | — |
| Vintage (some units) | 2007, 2008, 2009[2] | — |
| model | — | 110 SE[4] |
| application focus | — | process development applications[4] |
| process capability | — | deep silicon plasma etching[4] |
| capabilities | — | very high aspect ratio trench etch and profile control[4] |
| configuration | — | multiple configurations with minimum technical intervention[4] |
| System type | — | plasma etch system[6] |
| Supported components | — | MEMS and 3D-IC components[4] |
| Control capability | — | very high aspect ratio trench etch and profile control[6] |
| Physical description | — | compact[4] |
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