Comparison ledger
Lam Research 2300 Versys Kiyo, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 2300 Versys KiyoLam Research | 110Tegal |
|---|---|---|
| OEM | Lam Research | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research 2300 Versys Kiyo | Tegal 110 |
| Cited variants |
| |
| Specifications | ||
| Wafer Size | 300mm (12 inch)[1] | — |
| Configuration (Kiyo 2300 V2) | 4 Kiyo CX chambers, 3 load ports, ATM robot with one end effector, VTM robot with dual end effectors, software version SP15-HF6, communication protocols RS232 and LON[1] | — |
| Application | Polysilicon Etch[1] | — |
| Plasma Source | Dual-frequency CCP[5] | — |
| Power System | 3kW RF generator with independent bias and source tuning[5] | — |
| Gas Configuration | Up to 10 gas lines, including reactive gases (CF₄, Cl₂, HBr) and radicals (O₂, N₂)[5] | — |
| Throughput | 60–100 wafers/hour (node-dependent)[5] | — |
| Wafer Cooling | ESC with ±1°C stability[5] | — |
| Aspect Ratio Capability | >30:1[5] | — |
| Chamber Design | Dual-chamber configuration with isolated process and exhaust zones[5] | — |
| Plasma Source Frequencies | 13.56 MHz + 2 MHz[5] | — |
| model | — | 110 SE[3] |
| application focus | — | process development applications[3] |
| process capability | — | deep silicon plasma etching[3] |
| capabilities | — | very high aspect ratio trench etch and profile control[3] |
| configuration | — | multiple configurations with minimum technical intervention[3] |
| System type | — | plasma etch system[7] |
| Supported components | — | MEMS and 3D-IC components[3] |
| Control capability | — | very high aspect ratio trench etch and profile control[7] |
| Physical description | — | compact[3] |
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