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839 800327 315 ESCversus110

Lam Research 839 800327 315 ESC, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
839 800327 315 ESCLam Research
110Tegal
OEMLam ResearchTegal
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyLam Research 839 800327 315 ESCTegal 110
Cited variants—
Specifications
ConfigurationLam 2300 300mm Etch Flex Talon ECT[2]—
ManufacturerLam Research[4]—
CategoryEtch[4]—
Designation839 800327 315 ESC[4]—
Associated toolLam 2300 300mm Etch Flex Talon ECT[3]—
Wafer size300mm[2]—
model—110 SE[1]
application focus—process development applications[1]
process capability—deep silicon plasma etching[1]
capabilities—very high aspect ratio trench etch and profile control[1]
configuration—multiple configurations with minimum technical intervention[1]
System type—plasma etch system[5]
Supported components—MEMS and 3D-IC components[1]
Control capability—very high aspect ratio trench etch and profile control[5]
Physical description—compact[1]

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Sources (5)Every fact above is drawn from these public sources
  1. [1]web.archive.orgweb.archive.org
  2. [2]inventory listing
  3. [3]inventory listing
  4. [4]waferpedia.comwaferpedia.com
  5. [5]waferpedia.comwaferpedia.com