Comparison ledger
Lam Research Alliance A 6 TCP 9400 DFM Polysilicon, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Alliance A 6 TCP 9400 DFM PolysiliconLam Research | 110Tegal |
|---|---|---|
| OEM | Lam Research | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research Alliance A 6 TCP 9400 DFM Polysilicon | Tegal 110 |
| Cited variants | — |
|
| Specifications | ||
| Wafer Size | 8 inch[2] | — |
| Voltage | 208 VAC[3] | — |
| Frequency | 50/60 Hz[3] | — |
| Full Load Current | 43 A[3] | — |
| Short Circuit Interrupting Capacity | 10 kA[3] | — |
| Main Circuit Breaker Rating | 50 A[3] | — |
| Software Version | A4.0-37VM[2] | — |
| ESC Material | Anodized Aluminum[2] | — |
| Interferometer EP | PM4[2] | — |
| Gas Box | Enhanced Universal (12 sticks)[2] | — |
| Pumps | Busch DS 80 Cobra, Busch BA 100 (2)[2] | — |
| Chillers | TCU Edwards 40/80 Plus, RPM Voltage SAG Enhanced[2] | — |
| Transport Module | TCP 9400 FM-P (Tungsten Silicide Etch)[2] | — |
| Software | A4.0-37VM[2] | — |
| PM4 | TCP 9400D FM-P, Wsix Etch[2] | — |
| ESC | Anodized Aluminum[2] | — |
| TCU | Edwards 40/80 Plus[2] | — |
| RPM | Voltage SAG Enhanced[2] | — |
| Main CB Current Rating | 50 A[3] | — |
| OEM | Lam[2] | — |
| Model | Alliance A 6 TCP 9400 DFM[2] | — |
| Process | Polysilicon etch[2] | — |
| Transport module | TCP 9400 FM-P[2] | — |
| Enhanced Universal Gas Box | 12 sticks[2] | — |
| PM4 Gas Box | Brooks GF 125 (10)[2] | — |
| Dry pumps | Busch DS 80 Cobra[2] | — |
| Chiller TCU | Edwards 40/80 Plus[2] | — |
| model | — | 110 SE[1] |
| application focus | — | process development applications[1] |
| process capability | — | deep silicon plasma etching[1] |
| capabilities | — | very high aspect ratio trench etch and profile control[1] |
| configuration | — | multiple configurations with minimum technical intervention[1] |
| System type | — | plasma etch system[4] |
| Supported components | — | MEMS and 3D-IC components[1] |
| Control capability | — | very high aspect ratio trench etch and profile control[4] |
| Physical description | — | compact[1] |
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