Comparison ledger
Lam Research Rainbow 9600 SE II TCP, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Rainbow 9600 SE II TCPLam Research | 110Tegal |
|---|---|---|
| OEM | Lam Research | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research Rainbow | Tegal 110 |
| Cited variants | — |
|
| Specifications | ||
| Configuration | With DSQ[2] | — |
| Wafer Type | Flat[2] | — |
| Vlave Type | VAT Pendulum Valve 65 Series[3] | — |
| SMIF | No[3] | — |
| Bulkhead | Wall Facia are Missing[3] | — |
| Monochromator Endpoint | Dual Endpoint Detector - Lam # 853 001983 110[3] | — |
| Software | E 2.0.1-044[3] | — |
| RF | 3X on Board Trumpf Generators (Top, Bias, DSQ)[3] | — |
| Cart | No[3] | — |
| Robot Type | Harmonic Drive[3] | — |
| Loader Type | Hine Indexers 38 A[3] | — |
| Turbo Pumps | Alcatel ATH 1300 MT[3] | — |
| OEM | Lam Research[3] | — |
| Model | Rainbow 9600 SE II TCP[3] | — |
| Category | Etch[2] | — |
| Equipment type | Plasma etcher[3] | — |
| Wafer size | 6 inch[3] | — |
| Turbo pump configuration | Adixen Magpower (Turbo Pump)[3] | — |
| Endpoint | Dual Endpoint Detector[3] | — |
| Convertible size | Convertible to 8"[3] | — |
| Valve type | VAT Pendulum Valve 65 Series[3] | — |
| ESC | Coated Aluminum ESC - Lam # 718 094756 061[3] | — |
| Etch architecture | Inductively coupled plasma (TCP)[2] | — |
| DSQ | With DSQ[3] | — |
| Endpoint detection | Dual endpoint detector[3] | — |
| Endpoint optics | Monochromator[3] | — |
| Turbo pump controller | Adixen Magpower[3] | — |
| Temperature controller | 12 CH Anafaze Temp Controller[3] | — |
| Throttle valve controller | AC 2 Controller[3] | — |
| Pendulum valve controller | VAT PM 7 Controller[3] | — |
| Manual WVDS controller | Present[3] | — |
| model | — | 110 SE[1] |
| application focus | — | process development applications[1] |
| process capability | — | deep silicon plasma etching[1] |
| capabilities | — | very high aspect ratio trench etch and profile control[1] |
| configuration | — | multiple configurations with minimum technical intervention[1] |
| System type | — | plasma etch system[4] |
| Supported components | — | MEMS and 3D-IC components[1] |
| Control capability | — | very high aspect ratio trench etch and profile control[4] |
| Physical description | — | compact[1] |
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