Comparison ledger
memsstar Orbis Alpha, Oxford Instruments NGP80, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Orbis Alphamemsstar | NGP80Oxford Instruments |
|---|---|---|
| OEM | memsstar | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | 200mm | 200mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | memsstar Orbis Alpha | Oxford Instruments NGP80 |
| Cited variants | — | |
| Specifications | ||
| System type | oxide etch system[2] | — |
| Process chemistry | hydrogen fluoride etchants[2] | — |
| Footprint | small footprint[2] | — |
| Dimensions | 600 x 540 x 900 mm[2] | — |
| Control | PC controlled[2] | — |
| User interface | resistive touch screen[2] | — |
| Selectivity to silicon nitride and silicon dioxide | < 5% 1σ[2] | — |
| Uniformity | < 5% 1σ[2] | — |
| Repeatability | < 5% 1σ[2] | — |
| Endpoint capability | unique endpoint capability[2] | — |
| Substrate size range | sample sizes to 200 mm[2] | — |
| Selectivity (silicon nitride and silicon dioxide) | excellent (<5% 1σ)[2] | — |
| Uniformity and repeatability | <5% 1σ[2] | — |
| Control interface | PC controlled with resistive touch screen[2] | — |
| Endpoint detection | unique endpoint capability[2] | — |
| Process window | large process window to optimize process for any structure[2] | — |
| Equipment name | — | Oxford NGP80 RIE[3] |
| Model | — | NGP80[4] |
| Configuration options | — | RIE, PECVD, RIE/PECVD[4] |
| Wafer size | — | up to 200 mm[4] |
| Electrode diameter | — | 240 mm[1] |
| RF power | — | 300 W[5] |
| Substrate temperature range (standard) | — | 5-80 °C[5] |
| Substrate temperature (max) | — | 400 °C[4] |
| Cryogenic temperature option | — | down to -150 °C[1] |
| Base pressure | — | ≤5×10⁻⁷ mbar[4] |
| Process pressure range | — | 10 mTorr to 10 Torr[4] |
| Gas species (RIE variant) | — | O2, CF4, SF6, Ar, CHF3, N2[5] |
| Chuck material | — | graphite[5] |
| Process Type | — | Reactive Ion Etch (RIE)[5] |
| Wafer Handling | — | pieces (unmounted), 100 mm, 150 mm[5] |
| Chuck Temperature Range | — | 5–80 °C[5] |
| Gas Species | — | O2, CF4, SF6, Ar, CHF3, N2[5] |
| Location | — | room W1-062[6] |
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