Comparison ledger
Nikon NSR 2205 i 8 A i-Line, Raith EBPG5200, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | EBPG5200Raith | |
|---|---|---|
| OEM | Nikon | Raith |
| Category | Lithography | Lithography |
| Wafer size | 6" | 6" |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Nikon NSR 2205 | Raith EBPG5200 |
| Cited variants | — |
|
| Specifications | ||
| Resolution | 0.5µm[2] | — |
| Computer Type | PDP11[3] | — |
| Rentical Size | 5 Inch[3] | — |
| Field Sizes | 15 / 17.5 / 20mm[3] | — |
| Wafer Size | 6 Inch Flat[3] | — |
| Reticle Libraries | 1[3] | — |
| Wafer Loader | Type 1[3] | — |
| Wafer size | Wafer Loader Pre-alignment 2[3] | 6"[5] |
| Configuration | Barcode Reader[3] | — |
| Wafer Loader Indexers | 2[3] | — |
| Autofocus | Single Point[3] | — |
| Chuck Type | Ceramic Ring Chuck[3] | — |
| Water Stage | Ballscrew[3] | — |
| MCS2 Version | 2.4B[3] | — |
| OEM | Nikon[3] | — |
| Model | NSR 2205 i 8 A i-Line[3] | — |
| Category | Lithography[2] | — |
| Retical size | 5 Inch[3] | — |
| Wafer size flat | 6 Inch Flat[3] | — |
| Wafer loader pre-alignment | 2[3] | — |
| Barcode reader | Yes[3] | — |
| FIA | Yes[3] | — |
| LSA | Yes[3] | — |
| LIA | Yes[3] | — |
| Levelling | Yes[3] | — |
| Vintage | 1991[3] | — |
| Technology | — | Direct write lithography / electron beam lithography[4] |
| Platform | — | Universal plinth platform shared with EBPG5150[4] |
| Stage | — | 6" full travel[4] |
| Column technology | — | EBPG Electron 100 kV[4] |
| Pattern generator | — | 125 MHz[4] |
| Beam current | — | Up to 350 nA[4] |
| Overlay accuracy | — | ≤ 5 nm[4] |
| Minimum feature size | — | Less than 8 nm[4] |
| Acceleration voltages | — | 20, 50 and 100 kV[4] |
| Large field size | — | Continuously variable up to 1 mm at all kVs[4] |
| Sample handling | — | Automatic 2 holder as standard; 10 holder optional[4] |
| Acceleration voltage | — | 100 kV[1] |
| Maximum current | — | 350 nA[1] |
| Mainfield size | — | 1 mm[1] |
| Minimum linewidth | — | <8 nm[1] |
| Beam current range | — | 100 pA to 250 nA[6] |
| Beam step frequency | — | 500 Hz to 125 MHz[6] |
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